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MB85RC16PNF-G-JNE1 is listed in the Memory IC range at ChipApex. The manufacturer field lists RAMXEED. Its product description is IC FRAM 16KBIT I2C 1MHZ 8SOP. Review the specifications below when checking this part for your BOM.
The MB85RC16PNF-G-JNE1 is a 16 Kbit (2,048 words x 8 bits) Ferroelectric Random Access Memory (FeRAM) integrated circuit manufactured by RAMXEED. It utilizes a two-wire serial interface (I2C) and operates within an ambient temperature range of -40°C to +85°C. The device functions with a supply voltage between 2.7 V and 3.6 V. Key electrical specifications include a maximum operating frequency of 1 MHz, read/write endurance of at least 10^12 cycles per byte, and standby current typically at 0.1 µA. Data retention is guaranteed for 10 years at +85°C. The component is housed in an 8-pin plastic SOP package.
Verify the specific ordering suffix to confirm the package type and shipping format. The JNE1 suffix indicates an 8-pin plastic SOP tube. Confirm moisture sensitivity level requirements and reflow soldering profiles prior to assembly. Ensure the design supports the required pull-up resistors for the SDA and SCL lines. Check for any recent product change notifications regarding material composition or manufacturing site updates.
Select this component when a system requires high rewrite endurance and immediate write completion without waiting for internal programming cycles. It is suitable for applications where battery backup for SRAM is undesirable due to maintenance or environmental constraints. Ensure the host microcontroller supports the I2C protocol and can handle the open-drain output characteristics of the SDA line. Verify that the available supply voltage range aligns with the 2.7 V to 3.6 V operational limits.
This part belongs to the MB85RC16 family of FeRAM chips produced by RAMXEED, formerly Fujitsu Semiconductor Memory Solutions Limited. The manufacturer continues to support existing products while maintaining original part numbering conventions. The technology leverages ferroelectric process and silicon gate CMOS processes to form nonvolatile memory cells, offering significant improvements in reliability over traditional EEPROM and Flash technologies.
FM24C16B-G
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