MB85RC1MTPNF-G-JNE1

Memory IC Overview

The MB85RC1MTPNF-G-JNE1 is a 1 Mbit (128 K x 8) Ferroelectric Random Access Memory (FeRAM) integrated circuit manufactured by RAMXEED. It utilizes a two-wire serial I2C interface and operates within a supply voltage range of 1.8 V to 3.6 V. The device supports clock frequencies up to 3.4 MHz in High Speed Mode and 1 MHz in Fast Mode Plus. It features a write endurance of at least 10^13 cycles per byte and data retention exceeding 10 years at +85°C. The component is housed in an 8-pin plastic SOP package with a lead pitch of 1.27 mm.

Memory IC Feature Summary

• Nonvolatile memory architecture eliminates the need for backup batteries while providing high-speed write operations without polling sequences.
• I2C bus compatibility allows connection of multiple slave devices using configurable hardware address pins A1 and A2.
• Hardware write protection via the WP pin enables secure locking of the entire memory array against unintended modifications.
• Low-power operation includes standby and sleep modes, reducing current consumption during idle periods.

Memory IC Applications

• Data logging systems requiring frequent write cycles and long-term data retention
• Embedded controllers needing battery-free nonvolatile storage
• Industrial instrumentation operating in wide temperature environments
• Smart metering applications with low power consumption requirements

Memory IC Procurement Notes

Verify the specific ordering suffix JNE1 corresponds to the tube packaging format required for your assembly process. Confirm that the manufacturer designation RAMXEED aligns with your approved vendor list, as this entity succeeded Fujitsu Semiconductor Memory Solutions Limited. Ensure compliance with RoHS and REACH regulations applicable to your region before finalizing procurement orders.

Memory IC Selection Notes

Select this component when a design requires high write endurance and fast access times without the latency associated with Flash memory polling. The I2C interface is suitable for space-constrained designs where fewer pins are available compared to SPI alternatives. Consider the 1.8 V to 3.6 V operating range to ensure compatibility with the system's logic levels and power rails.

Memory IC Part Context

This part belongs to the MB85RC1MT family of FeRAM devices from RAMXEED. The manufacturer continues to support existing product lines originally developed by Fujitsu Semiconductor Memory Solutions Limited under the same part numbering scheme. The technology leverages ferroelectric processes combined with silicon gate CMOS for reliable nonvolatile data storage.

Memory IC Replacement Considerations

MB85RC1MTPNF-G-JNERE1

Memory IC FAQ

Does the MB85RC1MTPNF-G-JNE1 require an acknowledge polling sequence after writing?

No, the device does not require an acknowledge polling sequence. Write operations complete immediately upon the stop condition, unlike EEPROM or Flash memory which typically require wait times.

How is the device address configured on the MB85RC1MTPNF-G-JNE1?

The device address is configured using external hardware connections to pins A1 and A2. These pins allow up to four devices to be connected to the same I2C bus by setting unique combinations of high or low logic levels.

What is the function of the WP pin on this component?

The WP (Write Protect) pin disables write operations when held at a high level. When low or left open (internally pulled down), it allows the entire memory array to be overwritten. Reading is always enabled regardless of the WP state.