MB85RC256LYPN-G-AME1

$2.48

Description：256kbit FRAM
Series：*
Mfr：RAMXEED
Package：Tube

SKU:da8bb4a7eab5 Category: Memory IC Brand: RAMXEED

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Product introduction

MB85RC256LYPN-G-AME1 is listed in the Memory IC range at ChipApex. The manufacturer field lists RAMXEED. Its product description is 256kbit FRAM. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MB85RC256LYPN-G-AME1

Description：256kbit FRAM
Series：*
Mfr：RAMXEED
Package：Tube
Memory Type：-
Memory Format：-
Technology：-
Memory Size：-
Memory Organization：-
Memory Interface：-
Clock Frequency：-
Write Cycle Time - Word, Page：-
Voltage - Supply：-
Operating Temperature：-
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Memory IC datasheet and documents for MB85RC256LYPN-G-AME1

MB85RC256LYPN-G-AME1

Memory IC Overview

The MB85RC256LY is a 256K-bit (32 K x 8) Ferroelectric Random Access Memory (FeRAM) utilizing I2C serial interface. It operates within a supply voltage range of 1.7 V to 1.95 V and supports an operating ambient temperature from -40°C to +125°C. The device features a maximum clock frequency of 3.4 MHz in High Speed Mode and 1 MHz in Fast Mode Plus. Read/write endurance reaches at least 10^13 cycles per byte, with data retention specified up to 70.4 years at +85°C. Available in 8-pin plastic SOP (150mil) and DFN packages.

Memory IC Feature Summary

Nonvolatile memory cells retain data without backup batteries, eliminating the need for polling sequences after writing operations.

Memory IC Applications

Data logging systems requiring high endurance and low power consumption
Embedded controllers needing fast write access without programming wait times
Industrial applications operating across extended temperature ranges

Memory IC Procurement Notes

Verify that the specific ordering suffix matches the required package type and shipping form. Confirm the voltage range compatibility, as this variant operates strictly between 1.7 V and 1.95 V. Ensure the design accounts for the I2C bus pull-up requirements and address pin configurations. Check for any recent Product Change Notifications regarding material or assembly updates.

Memory IC Selection Notes

Select this component when a nonvolatile memory solution requires high write endurance exceeding standard Flash or EEPROM technologies. It is suitable for designs where battery-free data retention and fast write speeds are critical. Consider the 1.8 V supply requirement and ensure the system voltage aligns with the specified operating range. Verify package availability based on manufacturing volume needs.

Memory IC Part Context

This part belongs to the MB85RC256LY series of FeRAM devices manufactured by RAMXEED Limited. The manufacturer continues to support existing products while maintaining original Fujitsu part numbering conventions. The series utilizes ferroelectric process and silicon gate CMOS technologies for forming nonvolatile memory cells.