MB85RC256LYPNF-G-BCE1

Memory IC Overview

The MB85RC256LYPNF-G-BCE1 is a 256 Kbit (32 K x 8) Ferroelectric Random Access Memory (FeRAM) utilizing an I2C serial interface. It operates within a supply voltage range of 1.7 V to 1.95 V and supports clock frequencies up to 3.4 MHz in High Speed Mode. The device features a write endurance of at least 10^13 cycles per byte and retains data for up to 70.4 years at +85°C. It functions across an ambient temperature range of -40°C to +125°C and is housed in an 8-pin plastic SOP package with a 150mil lead pitch.

Memory IC Feature Summary

• Nonvolatile memory cells retain data without backup batteries, eliminating the need for polling sequences after writing operations.
• Supports bidirectional two-wire serial communication via SDA and SCL pins, allowing multiple devices on the same bus.
• Includes a hardware Write Protect pin that disables writing when set high while maintaining read access.
• Capable of operating in High Speed Mode to achieve data transmission rates up to 3.4 MHz.

Memory IC Applications

• Automotive information recording systems requiring AEC-Q100 compliance
• Industrial metering and measurement instruments needing frequent data logging
• Wearable electronic devices prioritizing low standby current consumption

Memory IC Procurement Notes

Verify the specific ordering suffix matches the required shipping form, as BCE1 denotes tube packaging while BCERE1 indicates tape and reel. Confirm the voltage variant corresponds to the system requirements, as the LY series specifies a 1.7 V to 1.95 V range. Ensure the design accounts for the 8-pin SOP physical dimensions and moisture sensitivity level during assembly processes.

Memory IC Selection Notes

Select this component when a nonvolatile memory solution requires high write endurance exceeding traditional EEPROM limits. The I2C interface simplifies PCB routing compared to parallel or SPI alternatives. Consider the strict 1.95 V maximum supply voltage constraint against standard 3.3 V or 5 V logic levels, potentially requiring level shifting if interfacing with higher voltage masters.

Memory IC Part Context

This part belongs to the MB85RC256LY family of FeRAM devices manufactured by RAMXEED. The manufacturer continues to support existing product lines under the new brand identity following its transition from Fujitsu Semiconductor. The LY designation specifically identifies the low-voltage operational variant within the broader 256 Kbit memory portfolio.

Memory IC Replacement Considerations

Direct substitutes include other MB85RC256LY variants such as MB85RC256LYPNF-G-BCERE1 for different packaging needs. Cross-family replacements like the MB85RS256 series offer SPI interfaces but differ in protocol and electrical characteristics.