MB85RC256LYPNF-G-BCERE1

Memory IC Overview

The MB85RC256LYPNF-G-BCERE1 is a 256 Kbit (32,768 words x 8 bits) Ferroelectric Random Access Memory (FeRAM) manufactured by RAMXEED. It utilizes an I2C two-wire serial interface and operates within a supply voltage range of 1.7 V to 1.95 V. The device supports High Speed Mode with a maximum clock frequency of 3.4 MHz and Fast Mode Plus at 1 MHz. It features a write endurance of at least 10^13 cycles per byte and does not require polling sequences after writing. The component is housed in an 8-pin plastic SOP package with a lead pitch of 1.27 mm and is designed for operation across an ambient temperature range of -40°C to +125°C.

Memory IC Feature Summary

• Non-volatile memory architecture that retains data without backup batteries and eliminates the need for programming wait times or ACK polling sequences found in Flash or EEPROM technologies.
• High-speed bidirectional communication via a standard I2C bus supporting multiple slave devices on a single bus line with configurable hardware addresses.
• Hardware-based global write protection capability through a dedicated pin that disables all write operations while maintaining full read access.
• Robust endurance characteristics allowing for extensive data rewriting cycles without degradation, suitable for applications requiring frequent real-time data logging.

Memory IC Applications

• Industrial metering systems requiring high-frequency data recording
• Automotive information storage modules
• Robotics control systems needing rapid state updates
• Embedded devices operating under extreme temperature conditions

Memory IC Procurement Notes

Verify the specific ordering suffix BCERE1 corresponds to the embossed carrier tape shipping form with a minimum quantity of 1500 units. Confirm the 8-pin SOP package dimensions match your PCB footprint requirements. Ensure the system power supply strictly adheres to the 1.7 V to 1.95 V operating range to maintain electrical specifications. Check for moisture sensitivity level 3 handling requirements during assembly.

Memory IC Selection Notes

Select this component when a non-volatile memory solution requires high write endurance and fast access speeds without the latency associated with Flash programming cycles. It is appropriate for designs where battery backup is undesirable due to maintenance costs or environmental concerns. Consider the low standby current and wide temperature range if the application involves energy-constrained or harsh environments. Verify I2C bus compatibility with the master controller's supported speed modes.

Memory IC Part Context

This part belongs to the MB85RC256LY FeRAM family produced by RAMXEED, formerly Fujitsu Semiconductor Memory Solutions Limited. The manufacturer continues to support existing product lines under the new corporate identity while maintaining original part numbering conventions. The technology leverages ferroelectric process and silicon gate CMOS processes to create nonvolatile memory cells with superior reliability compared to traditional electrically erasable programmable read-only memory devices.

Memory IC Replacement Considerations

Direct substitutes include other variants within the MB85RC256LY series such as MB85RC256LYPNF-G-BCE1 for tube packaging or MB85RC256LYPN-G-AWE1 for DFN packaging. Ensure any replacement maintains the same I2C interface protocol and voltage specifications. Verify that the physical package dimensions are compatible with the existing board layout if switching between SOP and DFN formats.

Memory IC FAQ

Does the MB85RC256LY require an acknowledge polling sequence after writing data?

No, the device performs high-speed write operations and does not require any waiting time or ACK polling sequence after issuing a stop condition, unlike EEPROM or Flash memory.

How is the device address configured on the I2C bus?

The device address consists of a fixed 4-bit type code (1010), a 3-bit address code determined by external connections to pins A0, A1, and A2, and a 1-bit read/write bit. This allows up to eight devices to be connected to the same bus.

What happens to the Write Protect (WP) pin if it is left unconnected?

The WP pin is internally pulled down to the VSS pin. If left open, it is recognized as a logic low level, which means the entire memory array remains write-enabled.