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MB85RC256LYPNF-GS-BCE1 is listed in the Memory IC range at ChipApex. The manufacturer field lists RAMXEED. Its product description is 256kbit FRAM. Review the specifications below when checking this part for your BOM.
Memory IC specifications for MB85RC256LYPNF-GS-BCE1
- Description：256kbit FRAM
- Series：*
- Mfr：RAMXEED
- Package：Tube
- Memory Type：-
- Memory Format：-
- Technology：-
- Memory Size：-
- Memory Organization：-
- Memory Interface：-
- Clock Frequency：-
- Write Cycle Time - Word, Page：-
- Voltage - Supply：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Access Time：-
- Grade：-
- Qualification：-
Memory IC datasheet and documents for MB85RC256LYPNF-GS-BCE1
Memory IC Overview
The MB85RC256LYPNF-GS-BCE1 is a 256 Kbit (32 K x 8) Ferroelectric Random Access Memory (FeRAM) utilizing an I2C serial interface. It operates within a supply voltage range of 1.7 V to 1.95 V and supports clock frequencies up to 3.4 MHz in High Speed Mode. The device features a write endurance of at least 10^13 cycles per byte and AEC-Q100 compliance for automotive applications. It is housed in an 8-pin plastic SOP package with a lead pitch of 1.27 mm.
Memory IC Feature Summary
- Nonvolatile memory architecture eliminates the need for backup batteries while retaining data without power.
- High-speed write operations remove the requirement for acknowledge polling sequences typically found in Flash or EEPROM technologies.
- AEC-Q100 certification ensures reliability and performance standards suitable for automotive electronic environments.
- Integrated hardware write protection allows entire memory array locking via the dedicated WP pin.
Memory IC Applications
- Automotive embedded systems requiring high durability and nonvolatile storage
- Industrial control units needing frequent data logging capabilities
- Smart metering devices demanding long-term data retention
Memory IC Procurement Notes
Verify that the specific ordering suffix matches the required packaging format, as this variant utilizes tube packing. Confirm that the system design accommodates the strict 1.7 V to 1.95 V operating voltage window. Ensure the I2C bus pull-up resistors are correctly sized for the intended communication speed. Check moisture sensitivity levels and reflow profile requirements before assembly.
Memory IC Selection Notes
Select this component when a low-voltage operation around 1.8 V is required alongside high write endurance. It is appropriate for designs where polling latency associated with other nonvolatile memories must be avoided. Consider the 8-pin SOP footprint constraints and the specific I2C address configuration options available through external pins.
Memory IC Part Context
This part belongs to the MB85RC256LY series of FeRAM devices manufactured by RAMXEED. It shares the core ferroelectric memory cell technology with other variants in the family but differs in interface type, voltage range, and packaging. The LY designation specifically indicates the 1.8 V operating voltage class compliant with automotive standards.
Memory IC Replacement Considerations
Direct substitutes include MB85RC256LYPNF-GS-BCERE1, which offers identical electrical characteristics but uses embossed carrier tape instead of tubes for automated handling.
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