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MB85RC256LYPNF-GS-BCERE1 is listed in the Memory IC range at ChipApex. The manufacturer field lists RAMXEED. Its product description is 256kbit FRAM. Review the specifications below when checking this part for your BOM.
Memory IC specifications for MB85RC256LYPNF-GS-BCERE1
- Description：256kbit FRAM
- Series：*
- Mfr：RAMXEED
- Package：Tape & Reel (TR)
- Memory Type：-
- Memory Format：-
- Technology：-
- Memory Size：-
- Memory Organization：-
- Memory Interface：-
- Clock Frequency：-
- Write Cycle Time - Word, Page：-
- Voltage - Supply：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Access Time：-
- Grade：-
- Qualification：-
Memory IC datasheet and documents for MB85RC256LYPNF-GS-BCERE1
Memory IC Overview
The MB85RC256LYPNF-GS-BCERE1 is a 256 Kbit (32 K x 8) Ferroelectric Random Access Memory (FeRAM) manufactured by RAMXEED. It features an I2C serial interface and operates within a supply voltage range of 1.7 V to 1.95 V. The device supports clock frequencies up to 3.4 MHz in High Speed Mode and 1 MHz in Fast Mode Plus. It is housed in an 8-pin plastic SOP package with a lead pitch of 1.27 mm, utilizing embossed carrier tape packaging. The component is AEC-Q100 compliant and rated for operation between -40°C and +125°C.
Memory IC Feature Summary
- AEC-Q100 automotive qualification compliance for high reliability applications
- Nonvolatile memory architecture eliminating the need for backup batteries
- High-speed write operations without requiring polling sequences after data transfer
- Extremely high read/write endurance exceeding 10^13 cycles per byte
Memory IC Applications
- Automotive electronic systems requiring robust nonvolatile storage
- Industrial equipment needing frequent data logging and rewriting
- Smart metering devices demanding long-term data retention
- Embedded systems operating under extreme temperature conditions
Memory IC Procurement Notes
Verify that the specific suffix BCERE1 corresponds to the embossed carrier tape shipping format containing 1500 units per reel. Confirm the 1.8V nominal voltage requirement aligns with your system power rails, as this variant differs from standard 5V or 3.3V FeRAM options. Ensure the SOP-8 footprint matches your PCB design guidelines before finalizing procurement orders.
Memory IC Selection Notes
Select this part when automotive certification is mandatory for the memory subsystem. Choose this model over standard industrial variants if the application environment exceeds typical commercial temperature ranges. Consider the low standby current and high endurance characteristics for battery-powered or high-cycle data acquisition systems where Flash memory degradation would be a concern.
Memory IC Part Context
This component belongs to the MB85RC256LY series of I2C FeRAM devices produced by RAMXEED. RAMXEED continues the legacy of Fujitsu Semiconductor's ferroelectric memory technology. The LY designation specifically indicates the 1.8V operating voltage variant, distinguishing it from other voltage versions within the same memory density family.
Memory IC Replacement Considerations
Direct pin-to-pin replacements within the same voltage class include MB85RC256LYPNF-GS-BCE1 (tube packaging). For different packaging requirements, MB85RC256LYPN-GS-AWE1 (DFN tray) offers equivalent electrical performance in an alternative form factor.
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