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MB85RC256TYPN-G-AME1 is listed in the Memory IC range at ChipApex. The manufacturer field lists RAMXEED. Its product description is 256kbit FRAM. Review the specifications below when checking this part for your BOM.
Memory IC specifications for MB85RC256TYPN-G-AME1
- Description：256kbit FRAM
- Series：*
- Mfr：RAMXEED
- Package：Tube
- Memory Type：-
- Memory Format：-
- Technology：-
- Memory Size：-
- Memory Organization：-
- Memory Interface：-
- Clock Frequency：-
- Write Cycle Time - Word, Page：-
- Voltage - Supply：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Access Time：-
- Grade：-
- Qualification：-
Memory IC datasheet and documents for MB85RC256TYPN-G-AME1
Memory IC Overview
The MB85RC256TYPN-G-AME1 is a 256Kbit (32 K x 8) Ferroelectric Random Access Memory (FeRAM) utilizing an I2C serial interface. It operates within a supply voltage range of 1.8 V to 3.6 V and supports clock frequencies up to 3.4 MHz in High Speed Mode. The device features a write endurance of at least 10^13 cycles per byte and includes a hardware Write Protect pin. It is housed in an 8-pin plastic DFN package measuring 5 mm by 6 mm, with an operating temperature range from -40°C to +125°C.
Memory IC Feature Summary
- Nonvolatile memory architecture eliminates the need for backup batteries while retaining data without power.
- High-speed bidirectional two-wire serial communication compatible with standard I2C protocols.
- Hardware-controlled write protection allows selective disabling of memory array writes via the WP pin.
- Ultra-low standby and sleep current consumption modes extend battery life in portable applications.
Memory IC Applications
- Industrial instrumentation requiring frequent data logging
- Automotive electronic control units demanding high reliability
- Smart metering systems needing long-term data retention
- Wearable devices prioritizing low power consumption
Memory IC Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and shipping format. Ensure compatibility with system voltage levels and I2C bus speed requirements before integration. Confirm moisture sensitivity handling procedures align with storage guidelines.
Memory IC Selection Notes
Select this component for designs requiring high write endurance and fast access times without polling overhead. Consider the 8-pin DFN footprint for compact layouts. Evaluate thermal management needs given the extended industrial temperature range capabilities.
Memory IC Part Context
This part belongs to the MB85RC256TY series of FeRAM devices manufactured by RAMXEED. It represents a continuation of Fujitsu Semiconductor's legacy nonvolatile memory technologies, offering improved performance metrics over traditional EEPROM solutions.
Memory IC Replacement Considerations
MB85RC256TYPNF-G-BCE1
Memory IC FAQ
Does the MB85RC256TYPN-G-AME1 require an acknowledge polling sequence after writing?
No, the device performs high-speed write operations internally, eliminating the need for software-based acknowledge polling typically required by Flash or EEPROM memories.
How is the Write Protect function implemented on this chip?
The entire memory array can be protected from writes by setting the WP pin to a high logic level. Reading remains enabled regardless of the WP pin state.
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