MB85RC256VPF-G-JNE2

Memory IC Overview

The MB85RC256VPF-G-JNE2 is a 256 Kbit (32 K × 8) Ferroelectric Random Access Memory (FRAM) utilizing I2C serial interface technology. It operates within a supply voltage range of 2.7 V to 5.5 V and supports clock frequencies up to 1 MHz. The device features non-volatile memory cells with read/write endurance of at least 10^12 cycles per byte, eliminating the need for polling sequences after write operations. Data retention is specified as 10 years at +85 °C, 95 years at +55 °C, and over 200 years at +35 °C. It is housed in an 8-pin plastic SOP package.

Memory IC Feature Summary

• Non-volatile ferroelectric memory architecture that retains data without backup batteries
• I2C two-wire serial interface supporting standard, fast, and fast mode plus speeds
• High write endurance exceeding 10^12 cycles with no required programming wait time
• Hardware write protect capability via dedicated pin

Memory IC Applications

• Data logging in industrial measurement instruments
• Configuration storage in automotive electronic control units
• Parameter retention in smart metering systems
• Embedded system firmware storage requiring frequent updates

Memory IC Procurement Notes

Verify the specific package variant FPT-8P-M08 corresponds to the JNE2 suffix. Confirm RoHS compliance status against current regulatory requirements. Ensure I2C bus pull-up resistor values are selected appropriately for the operating frequency and voltage level. Check humidity sensitivity handling procedures if the component has exceeded floor life limits.

Memory IC Selection Notes

Select this component when a non-volatile memory solution requires high write endurance and low power consumption without complex erase cycles. The I2C interface simplifies PCB routing compared to parallel interfaces. Ensure the application environment temperature remains within the -40 °C to +85 °C operational range to guarantee specified data retention periods.

Memory IC Part Context

This part belongs to the MB85RC256V FRAM family originally developed by Fujitsu Semiconductor. The manufacturer has transitioned to RAMXEED, which continues production under the new brand identity. The device represents a mature ferroelectric memory technology designed for reliability-critical applications where traditional Flash or EEPROM limitations regarding write cycles are prohibitive.

Memory IC Replacement Considerations

MB85RC256VPNF-G-JNE1: Identical electrical specifications but utilizes the FPT-8P-M02 package format instead of FPT-8P-M08.