MB85RC256VPNF-G-JNE1

Memory IC Overview

The MB85RC256VPNF-G-JNE1 is a 256 Kbit (32 K x 8) Ferroelectric Random Access Memory (FeRAM) utilizing an I2C serial interface. It operates within a supply voltage range of 2.7 V to 5.5 V and supports a maximum clock frequency of 1 MHz. The device features a read/write endurance of at least 10^12 cycles per byte and retains data for up to 10 years at +85°C. It functions in an ambient temperature range of -40°C to +85°C and is housed in an 8-pin plastic SOP package with a 150mil width.

Memory IC Feature Summary

• Nonvolatile memory architecture eliminates the need for backup batteries while providing high-speed write operations without polling sequences.
• I2C two-wire serial interface allows connection of up to eight devices on the same bus using hardware-configurable address pins.
• Hardware write protect pin enables disabling of write operations across the entire memory array while maintaining read access.

Memory IC Applications

• Data logging systems requiring frequent write cycles
• Industrial control equipment operating in wide temperature ranges
• Smart metering applications needing long-term data retention

Memory IC Procurement Notes

Verify the specific ordering suffix to confirm the package dimensions, as the base model supports both 150mil and 208mil SOP variants. Ensure the procurement documentation matches the required shipping form, such as tube or embossed carrier tape, to align with assembly line handling requirements. Confirm RoHS compliance status through official manufacturer channels prior to integration.

Memory IC Selection Notes

Select this component when designing systems that require nonvolatile storage with high endurance and low power consumption. The I2C interface simplifies PCB routing compared to parallel memories. Verify that the system voltage falls within the 2.7 V to 5.5 V operating range and that the available I2C bus speed does not exceed the 1 MHz maximum limit for reliable communication.

Memory IC Part Context

This part belongs to the MB85RC256V series of FeRAM devices manufactured by RAMXEED Limited. The series utilizes ferroelectric process technology combined with silicon gate CMOS processes to create nonvolatile memory cells. RAMXEED continues to support existing products under its current branding while maintaining original Fujitsu part numbering conventions.

Memory IC Replacement Considerations

MB85RC256VPNF-G-JNERE1