MB85RC512LYPN-G-AME1

Memory IC Overview

The MB85RC512LY is a 512Kbit (64 K × 8) ferroelectric random access memory (FeRAM) utilizing a two-wire I2C serial interface. It operates within a supply voltage range of 1.7 V to 1.95 V and supports clock frequencies up to 3.4 MHz in High Speed Mode. The device features a write endurance of at least 10^13 cycles per byte and retains data for up to 70.4 years at +85°C. It functions across an ambient temperature range of -40°C to +125°C and is available in 8-pin plastic SOP or DFN packages.

Memory IC Feature Summary

• Nonvolatile memory cells retain data without backup batteries, eliminating the need for polling sequences after writing.
• Supports bidirectional communication via SDA and SCL pins with configurable device addressing for up to eight units on a single bus.
• Includes a hardware Write Protect pin that disables write operations when set to a high level while maintaining read access.
• Provides software reset capabilities and command retry sequences to recover from communication malfunctions.

Memory IC Applications

• I2C slave devices requiring nonvolatile storage with high write endurance
• Systems needing immediate data retention without programming wait times
• Embedded applications operating in extended temperature environments

Memory IC Procurement Notes

Verify the specific package type required, as the MB85RC512LY family includes both 8-pin plastic SOP and 8-pin plastic DFN variants. Confirm the ordering suffix matches the desired shipping form, such as tube, embossed carrier tape, or tray. Ensure the voltage specifications align with the system's power supply constraints before procurement.

Memory IC Selection Notes

Select this component for designs requiring high-speed I2C communication up to 3.4 MHz and extreme write endurance. The narrow operating voltage range of 1.7 V to 1.95 V requires careful power supply design. Consider the available package options, including SOP and DFN, based on board space and thermal requirements.

Memory IC Part Context

Manufactured by RAMXEED Limited, formerly Fujitsu Semiconductor Memory Solutions Limited, this FeRAM chip maintains original part numbering conventions. It utilizes ferroelectric process technology combined with silicon gate CMOS processes to create nonvolatile memory cells capable of rapid write operations without the latency associated with flash memory technologies.

Memory IC Replacement Considerations

Public confirmed substitute part numbers are not provided in the source material.

Memory IC FAQ

Does the MB85RC512LY require an acknowledge polling sequence after writing?

No, the device performs high-speed write operations, so any waiting time for an ACK polling does not occur.

How many devices can be connected to the same I2C bus?

Up to eight devices can be connected to the same data bus using different combinations of the A0, A1, and A2 address pins.

What happens if the Write Protect pin is left open?

The Write Protect pin is internally pulled down to the VSS pin, so it is recognized as a low level, meaning the entire memory region remains write-enabled.