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MB85RC512LYPNF-G-BCERE1 is listed in the Memory IC range at ChipApex. The manufacturer field lists RAMXEED. Its product description is 512kbit FRAM. Review the specifications below when checking this part for your BOM.
Memory IC specifications for MB85RC512LYPNF-G-BCERE1
- Description：512kbit FRAM
- Series：*
- Mfr：RAMXEED
- Package：Tape & Reel (TR)
- Memory Type：-
- Memory Format：-
- Technology：-
- Memory Size：-
- Memory Organization：-
- Memory Interface：-
- Clock Frequency：-
- Write Cycle Time - Word, Page：-
- Voltage - Supply：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Access Time：-
- Grade：-
- Qualification：-
Memory IC datasheet and documents for MB85RC512LYPNF-G-BCERE1
Memory IC Overview
The MB85RC512LYPNF-G-BCERE1 is a 512K-bit (64 K x 8) ferroelectric random access memory (FeRAM) integrated circuit manufactured by RAMXEED. It utilizes a two-wire serial I2C interface and operates within a supply voltage range of 1.7 V to 1.95 V. The device supports standard, fast, fast mode plus, and high-speed modes with maximum clock frequencies up to 3.4 MHz. It features an operating temperature range from -40°C to +125°C and is housed in an 8-pin plastic SOP package.
Memory IC Feature Summary
- Nonvolatile memory cells retain data without backup batteries and offer write endurance exceeding 10^13 cycles per byte.
- I2C communication protocol eliminates the need for polling sequences after writing operations.
- Hardware write protection is available via the WP pin to secure the entire memory array.
- Supports multiple bus addressing configurations allowing up to eight devices on a single data bus.
Memory IC Applications
- Data logging in industrial environments requiring high write endurance
- Embedded systems utilizing low-voltage power supplies
- Automotive electronics operating under extended temperature conditions
- Smart metering applications requiring frequent data updates
Memory IC Procurement Notes
Verify that the application design strictly adheres to the recommended operating voltage limits of 1.7 V to 1.95 V. Confirm that the system clock frequency does not exceed the specified maximum for the selected I2C mode. Ensure proper pull-up resistor selection for the SDA and SCL lines to maintain signal integrity during high-speed transitions.
Memory IC Selection Notes
Select this component when nonvolatile storage with high write endurance is required alongside low-power consumption. The specific ordering suffix BCERE1 indicates the 8-pin plastic SOP package configuration supplied in embossed carrier tape format. Verify compatibility with the master controller's I2C voltage levels before integration.
Memory IC Part Context
This part belongs to the MB85RC512LY FeRAM series produced by RAMXEED Limited, formerly Fujitsu Semiconductor Memory Solutions Limited. The manufacturer maintains original part numbering conventions while transitioning brand identity. The technology leverages ferroelectric process and silicon gate CMOS processes for nonvolatile memory cell formation.
Memory IC Replacement Considerations
Direct substitutes include the tube-packaged version MB85RC512LYPNF-G-BCE1. Alternative packaging options within the same family include the DFN variants MB85RC512LYPN-G-AWE1 and MB85RC512LYPN-G-AWEWE1.
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