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MB85RC512LYPNF-GS-BCE1 is listed in the Memory IC range at ChipApex. The manufacturer field lists RAMXEED. Its product description is 512kbit FRAM. Review the specifications below when checking this part for your BOM.
Memory IC specifications for MB85RC512LYPNF-GS-BCE1
- Description：512kbit FRAM
- Series：*
- Mfr：RAMXEED
- Package：Tube
- Memory Type：-
- Memory Format：-
- Technology：-
- Memory Size：-
- Memory Organization：-
- Memory Interface：-
- Clock Frequency：-
- Write Cycle Time - Word, Page：-
- Voltage - Supply：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Access Time：-
- Grade：-
- Qualification：-
Memory IC datasheet and documents for MB85RC512LYPNF-GS-BCE1
Memory IC Overview
The MB85RC512LYPNF-GS-BCE1 is a 512 Kbit (64 K × 8) ferroelectric random access memory (FeRAM) device manufactured by RAMXEED. It utilizes an I²C serial interface and operates within a supply voltage range of 1.7 V to 1.95 V. The component supports clock frequencies up to 3.4 MHz in High Speed Mode and 1 MHz in Fast Mode Plus. It features a write endurance of at least 10¹³ cycles per byte and includes AEC-Q100 compliance for automotive applications. The device is housed in an 8-pin plastic SOP package with a lead pitch of 1.27 mm.
Memory IC Feature Summary
- Nonvolatile memory retains data without backup power, eliminating the need for polling sequences after writing operations.
Memory IC Applications
- Automotive electronic systems requiring AEC-Q100 compliant components
- Industrial control systems operating in high-temperature environments
- Data logging devices requiring high write endurance
Memory IC Procurement Notes
Verify that the specific ordering suffix matches the required shipping form, as the BCE1 designation indicates tube packaging. Confirm the operating voltage requirements align with the 1.7 V to 1.95 V specification before integration. Ensure the design accounts for the moisture sensitivity level and reflow conditions specified in the datasheet to maintain reliability.
Memory IC Selection Notes
Select this component when a nonvolatile memory solution with extremely high write endurance is required. It is suitable for applications where frequent data updates occur, such as counters or loggers, due to its resistance to wear-out mechanisms common in flash memory. Consider the low standby current and wide temperature range for energy-constrained or harsh environment designs.
Memory IC Part Context
This part belongs to the MB85RC512LY series of FeRAM devices from RAMXEED. The manufacturer continues to support existing products under the original Fujitsu Semiconductor naming conventions. The series offers various package options and shipping forms to accommodate different manufacturing needs while maintaining consistent electrical characteristics.
Memory IC Replacement Considerations
Direct replacements must match the 512 Kbit capacity, I²C interface, and 1.7 V to 1.95 V operating voltage. Verify pin compatibility and ensure the substitute component meets AEC-Q100 standards if used in automotive contexts. Check for equivalent write endurance and data retention specifications.
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