MB85RC64TAPN-G-AMEWE1

Memory IC Overview

The MB85RC64TAPN-G-AMEWE1 is a 64 Kbit (8K x 8) Ferroelectric Random Access Memory (FeRAM) integrated circuit manufactured by RAMXEED. It utilizes an I2C two-wire serial interface and supports operation frequencies up to 3.4 MHz in High Speed Mode. The device operates within a supply voltage range of 1.8 V to 3.6 V and functions across an ambient temperature range of -40°C to +105°C. It is housed in an 8-pin plastic SON package with dimensions of 2.0 mm x 3.0 mm.

Memory IC Feature Summary

• Nonvolatile memory cells retain data without backup batteries, offering read/write endurance of at least 10^13 cycles per byte.

Memory IC Applications

• I2C bus slave devices requiring nonvolatile storage
• Systems needing high-speed write operations without polling sequences

Memory IC Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and shipping format. Ensure compatibility with system voltage levels and I2C bus timing requirements before integration. Confirm environmental compliance status for the target region.

Memory IC Selection Notes

Select this component for applications requiring high endurance and fast write speeds compared to Flash or EEPROM technologies. Consider the 8-pin SON package constraints for PCB layout. Verify that the I2C master controller supports the required High Speed Mode frequency if maximum performance is needed.

Memory IC Part Context

This part belongs to the MB85RC64TA series of FeRAM chips from RAMXEED, formerly Fujitsu Semiconductor Memory Solutions Limited. The series provides nonvolatile memory solutions using ferroelectric process technology combined with silicon gate CMOS processes for forming memory cells.

Memory IC Replacement Considerations

FM25CL64B-DGTR