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MB85RE4M2TFN-G-ASE1 is listed in the Memory IC range at ChipApex. The manufacturer field lists RAMXEED. Its product description is IC FRAM 4MBIT PAR 44TSOP. Review the specifications below when checking this part for your BOM.
The MB85RE4M2TFN-G-ASE1 is a 4 Mbit Ferroelectric Random Access Memory (FRAM) integrated circuit manufactured by RAMXEED. It features a parallel interface with a memory organization of 256K x 16 bits. The device supports a supply voltage range of 1.8V to 3.6V and operates within an ambient temperature range of -40°C to +85°C. It utilizes a TSOP44 surface-mount package. Key electrical specifications include a write cycle time of 150ns for word or page operations.
Verify the specific suffix ASE1 against official datasheets to confirm the TSOP44 package and pinout configuration. Ensure compatibility with system voltage levels between 1.8V and 3.6V. Confirm that the parallel interface requirements match the host controller's capabilities. Check for RoHS compliance status in current documentation.
Select this component when a 4 Mbit capacity with 16-bit parallel width is required. Consider the TSOP44 package constraints for PCB layout. Evaluate the 150ns write cycle time against application latency needs. Compare power consumption characteristics at 1.8V versus 3.6V operation if energy efficiency is critical.
This part belongs to the MB85R4M2T series of FRAM devices from RAMXEED. These chips are designed as replacements for traditional EEPROMs or Flash memories where endurance and speed are priorities. The series typically includes variants with different interfaces, such as SPI or parallel, and various package options like FBGA or TSOP.
Infineon Technologies FM25R4M-BHNTR is a comparable 4 Mbit FRAM with a parallel interface. Verify pin compatibility and timing parameters before substitution.
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