Memory IC MB85RE4M2TFN-G-ASE1 product image

MB85RE4M2TFN-G-ASE1

  • Description:IC FRAM 4MBIT PAR 44TSOP
  • Series:-
  • Mfr:RAMXEED
  • Package:Tray

SKU:11a6caafdff3 Category: Brand:

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MB85RE4M2TFN-G-ASE1 is listed in the Memory IC range at ChipApex. The manufacturer field lists RAMXEED. Its product description is IC FRAM 4MBIT PAR 44TSOP. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MB85RE4M2TFN-G-ASE1

  • Description:IC FRAM 4MBIT PAR 44TSOP
  • Series:-
  • Mfr:RAMXEED
  • Package:Tray
  • Memory Type:Non-Volatile
  • Memory Format:FRAM
  • Technology:FRAM (Ferroelectric RAM)
  • Memory Size:4Mbit
  • Memory Organization:256K x 16
  • Memory Interface:-
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:150ns
  • Voltage - Supply:1.8V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package:44-TSOP
  • Access Time:-
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for MB85RE4M2TFN-G-ASE1

MB85RE4M2TFN-G-ASE1

Memory IC Overview

The MB85RE4M2TFN-G-ASE1 is a 4 Mbit Ferroelectric Random Access Memory (FRAM) integrated circuit manufactured by RAMXEED. It features a parallel interface with a memory organization of 256K x 16 bits. The device supports a supply voltage range of 1.8V to 3.6V and operates within an ambient temperature range of -40°C to +85°C. It utilizes a TSOP44 surface-mount package. Key electrical specifications include a write cycle time of 150ns for word or page operations.

Memory IC Feature Summary

  • Nonvolatile data retention capability inherent to FRAM technology
  • Parallel interface architecture supporting high-speed data access
  • Robust construction suitable for demanding industrial environments

Memory IC Applications

  • Automotive systems requiring reliable nonvolatile storage
  • Industrial equipment utilizing high-speed data logging
  • Data processing applications needing rapid write cycles

Memory IC Procurement Notes

Verify the specific suffix ASE1 against official datasheets to confirm the TSOP44 package and pinout configuration. Ensure compatibility with system voltage levels between 1.8V and 3.6V. Confirm that the parallel interface requirements match the host controller's capabilities. Check for RoHS compliance status in current documentation.

Memory IC Selection Notes

Select this component when a 4 Mbit capacity with 16-bit parallel width is required. Consider the TSOP44 package constraints for PCB layout. Evaluate the 150ns write cycle time against application latency needs. Compare power consumption characteristics at 1.8V versus 3.6V operation if energy efficiency is critical.

Memory IC Part Context

This part belongs to the MB85R4M2T series of FRAM devices from RAMXEED. These chips are designed as replacements for traditional EEPROMs or Flash memories where endurance and speed are priorities. The series typically includes variants with different interfaces, such as SPI or parallel, and various package options like FBGA or TSOP.

Memory IC Replacement Considerations

Infineon Technologies FM25R4M-BHNTR is a comparable 4 Mbit FRAM with a parallel interface. Verify pin compatibility and timing parameters before substitution.

MB85RE4M2TFN-G-ASE1MB85RE4M2TFN-G-ASE1

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