Memory IC MB85RS128TYPNF-G-BCE1 product image

MB85RS128TYPNF-G-BCE1

$2.44
  • Description:IC FRAM 128KBIT SPI 8SOP
  • Series:-
  • Mfr:RAMXEED
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:398d3037af50 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

MB85RS128TYPNF-G-BCE1 is listed in the Memory IC range at ChipApex. The manufacturer field lists RAMXEED. Its product description is IC FRAM 128KBIT SPI 8SOP. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MB85RS128TYPNF-G-BCE1

  • Description:IC FRAM 128KBIT SPI 8SOP
  • Series:-
  • Mfr:RAMXEED
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Memory Type:Non-Volatile
  • Memory Format:FRAM
  • Technology:FRAM (Ferroelectric RAM)
  • Memory Size:128Kbit
  • Memory Organization:16K x 8
  • Memory Interface:SPI
  • Clock Frequency:33 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.8V ~ 3.6V
  • Operating Temperature:-40°C ~ 125°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOP
  • Access Time:13 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for MB85RS128TYPNF-G-BCE1

MB85RS128TYPNF-G-BCE1

Memory IC Overview

The MB85RS128TYPNF-G-BCE1 is a 128Kbit (16K x 8) Ferroelectric Random Access Memory (FeRAM) utilizing SPI interface. It operates within a supply voltage range of 1.8V to 3.6V and supports clock frequencies up to 33 MHz. The device features high endurance of 10^13 read/write operations per byte and data retention exceeding 3.38 years at +125°C. It functions in an ambient temperature range of -40°C to +125°C and is housed in an 8-pin plastic SOP package.

Memory IC Feature Summary

  • Nonvolatile memory cells retain data without backup power, eliminating the need for SRAM batteries.
  • High endurance capability allows for 10^13 read/write cycles per byte, significantly surpassing Flash and E2PROM limits.
  • Supports Serial Peripheral Interface (SPI) modes 0 and 3 with operation speeds up to 33 MHz.
  • Includes programmable block protection and write protect mechanisms via status register control.

Memory IC Applications

  • Automotive systems requiring high-temperature reliability
  • Industrial equipment needing frequent data logging
  • Embedded controllers requiring fast nonvolatile storage

Memory IC Procurement Notes

Verify the specific ordering suffix matches the required shipping form. The BCE1 designation indicates tube packaging, whereas BCERE1 denotes tape and reel. Confirm moisture sensitivity level requirements and reflow soldering profiles prior to assembly to ensure data integrity.

Memory IC Selection Notes

Select this component when high-speed serial access and extreme endurance are critical. It serves as a direct replacement for battery-backed SRAM or standard EEPROM in applications demanding rapid write cycles. Ensure the system voltage aligns with the 1.8V to 3.6V operating range.

Memory IC Part Context

This part belongs to the MB85RS128TY series of FeRAM devices manufactured by RAMXEED. It maintains the original Fujitsu Semiconductor part numbering structure. The technology leverages ferroelectric process and silicon gate CMOS for nonvolatile cell formation.

Memory IC Replacement Considerations

MB85RS128BPNF-G-JNE1 is listed as a similar alternative part number.

MB85RS128TYPNF-G-BCE1MB85RS128TYPNF-G-BCE1
$2.44
Buy Now