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MB85RS128TYPNF-G-BCERE1 is listed in the Memory IC range at ChipApex. The manufacturer field lists RAMXEED. Its product description is IC FRAM 128KBIT SPI 33MHZ 8SOP. Review the specifications below when checking this part for your BOM.
The MB85RS128TYPNF-G-BCERE1 is a 128 Kbit Ferroelectric Random Access Memory (FeRAM) IC manufactured by RAMXEED. It features a 16K x 8 bit organization and utilizes a Serial Peripheral Interface (SPI) with a maximum operating frequency of 33 MHz. The device operates within a supply voltage range of 1.8 V to 3.6 V and supports an ambient temperature range from -40°C to +125°C. It is housed in an 8-pin plastic SOP package and is supplied in embossed carrier tape packaging.
Verify the specific ordering suffix BCERE1 corresponds to the embossed carrier tape shipping form rather than tube packaging. Confirm that the moisture sensitivity level and reflow soldering profiles align with your assembly line capabilities. Ensure the 8-pin SOP footprint matches your PCB design constraints before finalizing procurement orders.
Select this component when nonvolatile storage with high endurance and fast write speeds is required. It serves as a direct replacement for SRAM or Flash in applications where battery backup is undesirable. Consider the 1.8V to 3.6V voltage range compatibility with your system's logic levels and the -40°C to +125°C temperature rating for environmental suitability.
This part belongs to the MB85RS128TY series of FeRAM products from RAMXEED, formerly Fujitsu Semiconductor Memory Solutions Limited. The series is designed for high-reliability applications demanding extensive write cycles and data retention. The MB85RS128TYPNF-G-BCERE1 variant specifically denotes the surface-mount package with tape-and-reel delivery format.
Direct substitutes include other 128 Kbit SPI FeRAM devices from manufacturers such as Cypress or Ramtron, provided they match the 8-SOP package and voltage specifications. Verify interface timing and command set compatibility if replacing with different brand equivalents.
The device supports 10^13 read/write operations per byte, significantly exceeding typical Flash or EEPROM endurance limits.
No, it is a nonvolatile memory that retains data without backup power, unlike volatile SRAM.
The component supports SPI Mode 0 (CPOL=0, CPHA=0) and Mode 3 (CPOL=1, CPHA=1).
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