MB85RS128TYPNF-GS-BCERE1

Memory IC Overview

The MB85RS128TYPNF-GS-BCERE1 is a 128Kbit (16K x 8) Ferroelectric Random Access Memory (FeRAM) utilizing SPI interface. It operates within a supply voltage range of 1.8V to 3.6V and supports clock frequencies up to 40 MHz at higher voltages or 33 MHz at lower ranges. The device features high endurance of 10^13 read/write operations per byte and data retention exceeding 3.38 years at +125°C. It complies with AEC-Q100 Grade 1 standards for automotive applications, functioning reliably between -40°C and +125°C in an 8-pin SOP package.

Memory IC Feature Summary

• Nonvolatile memory cells retain data without backup batteries, offering significantly higher endurance than Flash or EEPROM technologies.
• Serial Peripheral Interface (SPI) supports Mode 0 and Mode 3 with automatic address increment capabilities for continuous reading and writing.
• Integrated block protection and write protect mechanisms allow flexible configuration of memory security via status register bits.
• Low power consumption includes standby current of 45 µA maximum and sleep mode functionality to minimize energy usage.

Memory IC Applications

• Automotive systems requiring high-temperature reliability and AEC-Q100 compliance
• Industrial control units needing frequent data logging with high write endurance
• Embedded devices requiring nonvolatile storage without battery backup

Memory IC Procurement Notes

Verify the specific ordering suffix BCERE1 corresponds to the embossed carrier tape shipping form with a minimum quantity of 1500 units. Confirm that the component meets RoHS directives and REACH regulations as specified in the datasheet. Ensure compatibility with the 8-pin plastic SOP package dimensions for PCB layout. Check moisture sensitivity level requirements for storage and handling procedures.

Memory IC Selection Notes

Select this component when high-speed serial communication is required alongside extreme durability for write-intensive applications. The wide operating temperature range makes it suitable for harsh environments where standard Flash memory may degrade. Consider the low standby and sleep currents for battery-powered designs. Ensure the system voltage aligns with the 1.8V to 3.6V operational window.

Memory IC Part Context

This part belongs to the MB85RS128TY series of FeRAM devices manufactured by RAMXEED Limited, formerly Fujitsu Semiconductor Memory Solutions Limited. The series maintains original Fujitsu part numbering while continuing support for existing products. The technology combines ferroelectric process with silicon gate CMOS for nonvolatile memory cells.

Memory IC Replacement Considerations

MB85RS128TYPNF-G-BCE1 is a similar alternative within the same product family, differing primarily in packaging format (tube versus tape). Verify pinout compatibility and electrical specifications before substitution.