MB85RS2MTPH-G-JNE1

Memory IC Overview

The MB85RS2MTPH-G-JNE1 is a 2 Mbit (262,144 words × 8 bits) Ferroelectric Random Access Memory (FRAM) integrated circuit manufactured by RAMXEED. It utilizes the Serial Peripheral Interface (SPI) for communication and operates within a supply voltage range of 1.8 V to 3.6 V. The device supports standard SPI modes 0 and 3 with a maximum clock frequency of 25 MHz, extending to 40 MHz for Fast Read commands at voltages between 2.7 V and 3.6 V. It features an endurance rating of 10^13 read/write operations per byte and maintains data retention for up to 10 years at +85 °C. The component is housed in an 8-pin plastic DIP package and functions across an ambient temperature range of -40 °C to +85 °C.

Memory IC Feature Summary

• Nonvolatile memory architecture utilizing ferroelectric process technology eliminates the need for backup batteries.
• High endurance capability supporting 10^13 write cycles per byte without requiring erase operations.
• Integrated status register provides configurable block protection and write enable latch functionality.
• Supports low power consumption modes including standby and sleep states with defined recovery times.

Memory IC Applications

• Battery Management Systems (BMS) for electric vehicles requiring frequent data logging
• Industrial control systems needing high-speed data acquisition and storage
• Smart metering applications demanding long-term data retention and reliability

Memory IC Procurement Notes

Verify the specific ordering suffix to confirm the package type, as the base model supports both SOP and DIP configurations. Confirm compliance with RoHS directives and restricted substance regulations relevant to the target market. Check for Product Change Notifications regarding material or packaging updates before finalizing procurement specifications.

Memory IC Selection Notes

Select this component when high write endurance and fast access times are critical compared to Flash or EEPROM alternatives. Ensure the system design accommodates the 1.8 V to 3.6 V operating voltage range and SPI interface timing requirements. Consider the 8-pin DIP package constraints if through-hole mounting is required for the application environment.

Memory IC Part Context

This part belongs to the MB85RS2MT family of FRAM devices produced by RAMXEED, originally developed under Fujitsu Semiconductor. The family offers nonvolatile memory solutions that combine the speed of SRAM with the nonvolatility of Flash, suitable for applications requiring frequent data updates without wear-out concerns associated with traditional flash technologies.

Memory IC Replacement Considerations

MB85RS2MTPF-G-JNE2

Memory IC FAQ

What is the maximum clock frequency for the Fast Read command?

The maximum clock frequency for the FSTRD command is 40 MHz when the supply voltage is between 2.7 V and 3.6 V.

How does the Hold pin function during serial communication?

When the HOLD pin is set to a low level while CS is low, serial input/output is interrupted without deselecting the chip, placing SO in a High-Z state.

What is the data retention period specified for this device?

The device guarantees data retention for up to 10 years at an ambient temperature of +85 °C.