MB85RS4MLYPF-G-BCE1

Memory IC Overview

The MB85RS4MLYPF-G-BCE1 is a 4 Mbit (512 K x 8) Ferroelectric Random Access Memory (FeRAM) utilizing SPI interface. It operates within a supply voltage range of 1.7 V to 1.95 V and supports clock frequencies up to 50 MHz. The device features an operating temperature range from -40°C to +125°C and is housed in an 8-pin plastic SOP package.

Memory IC Feature Summary

• High endurance supporting 10^13 read/write operations per byte
• Includes a special sector region with data stability guaranteed after three reflow cycles
• Contains a unique 64-bit serial number for identification
• Operates without backup battery requirements

Memory IC Applications

• High-temperature environment applications
• Systems requiring high-speed nonvolatile memory access
• Embedded systems needing frequent write cycles

Memory IC Procurement Notes

Verify the specific ordering suffix to confirm the packaging format, as the PF suffix indicates tube packaging while other suffixes may denote tape and reel configurations. Ensure the input voltage strictly adheres to the 1.7 V to 1.95 V specification to prevent device malfunction or damage.

Memory IC Selection Notes

Select this component when a low-voltage SPI FeRAM with high endurance is required. Consider the 8-pin SOP package constraints and the narrow voltage window. Verify that the system can maintain the CS signal during power transitions to ensure data integrity.

Memory IC Part Context

This part belongs to the MB85RS4MLY series of FeRAM devices manufactured by RAMXEED. It replaces legacy Fujitsu semiconductor memory solutions, maintaining the original part numbering structure while continuing support for existing product lines under the new manufacturer identity.

Memory IC Replacement Considerations

MB85RS4MLYPF-G-BCERE1