MB85RS4MTPF-G-BCE1

Memory IC Overview

The MB85RS4MTPF-G-BCE1 is a 4 Mbit (524,288 words x 8 bits) Ferroelectric Random Access Memory (FeRAM) utilizing SPI interface. It operates within a supply voltage range of 1.8 V to 3.6 V and supports clock frequencies up to 40 MHz. The device features high endurance of 10^13 read/write operations per byte and data retention exceeding 10 years at +85°C. It functions in an ambient temperature range of -40°C to +85°C and is housed in an 8-pin plastic SOP (208mil) tube package.

Memory IC Feature Summary

• Nonvolatile memory cells retain data without backup batteries, eliminating the need for external power maintenance circuits.

Memory IC Applications

• Data logging systems requiring frequent write cycles
• Industrial control applications with high-temperature requirements
• Embedded systems needing fast random access memory

Memory IC Procurement Notes

Verify the specific ordering suffix matches the required shipping form. The part number indicates tube packaging; confirm minimum shipping quantities with the manufacturer or distributor prior to order placement. Ensure compatibility with moisture sensitivity level 3 handling procedures during assembly.

Memory IC Selection Notes

Select this component when high endurance and fast write speeds are critical compared to Flash or EEPROM alternatives. Verify that the system logic levels align with the 1.8 V to 3.6 V operating range. Confirm that the SPI mode 0 or mode 3 timing constraints fit the microcontroller interface capabilities.

Memory IC Part Context

This FeRAM belongs to the MB85RS4MT series by RAMXEED, formerly Fujitsu Semiconductor Memory Solutions Limited. The product maintains original part numbering conventions while transitioning manufacturing support. It serves as a direct replacement for legacy nonvolatile memory solutions in existing designs requiring robust data retention.

Memory IC Replacement Considerations

MB85RS4MTPF-G-BCERE1