MB85RS4MTPF-G-JNE2

Memory IC Overview

The MB85RS4MTPF-G-JNE2 is a 4 Mbit Ferroelectric Random Access Memory (FRAM) integrated circuit manufactured by RAMXEED. It features a Serial Peripheral Interface (SPI) for data communication and operates within a supply voltage range of 1.8 V to 3.6 V. The device is housed in an 8-SOP package and supports an operating temperature range from -40°C to +85°C. This non-volatile memory technology provides high endurance and low power consumption suitable for various industrial applications.

Memory IC Feature Summary

• Utilizes ferroelectric random access memory technology for non-volatile data retention without requiring refresh cycles.
• Supports serial peripheral interface communication protocol for efficient data transfer.
• Operates across a wide voltage range from 1.8 V to 3.6 V.
• Designed for reliable performance in extended industrial temperature environments.

Memory IC Applications

• Automotive systems
• Industrial equipment
• High-speed data logging and processing

Memory IC Procurement Notes

Verify the specific suffix JNE2 against current manufacturer documentation to confirm package dimensions and pinout compatibility. Check for recent Product Change Notifications or discontinuance notices, as FRAM product lines may undergo lifecycle changes. Ensure the source document explicitly lists this part number as active or available before procurement planning.

Memory IC Selection Notes

Select this component when a 4 Mbit capacity with SPI interface is required. Consider the 1.8 V to 3.6 V operating range for system power design. Verify that the 8-SOP package fits the PCB layout constraints. Confirm that the -40°C to +85°C temperature rating meets the environmental requirements of the target application.

Memory IC Part Context

This part belongs to the MB85RS4MT series of FRAM chips. It shares the same core memory architecture and interface specifications as other variants in the family, differing primarily in packaging and suffix codes. The series is characterized by high read/write endurance and low power consumption typical of ferroelectric memory technologies.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official manufacturer documentation for potential obsolescence notices or recommended alternative components if this part is discontinued.