MB85RS4MTYPF-G-BCE1

Memory IC Overview

The MB85RS4MTYPF-G-BCE1 is a 4 Mbit (524,288 words x 8 bits) Ferroelectric Random Access Memory (FeRAM) utilizing SPI interface. It operates within a supply voltage range of 1.8 V to 3.6 V and supports clock frequencies up to 50 MHz. The device features high endurance of 10^13 read/write operations per byte and data retention exceeding 4.2 years at +125°C. It includes a unique 64-bit serial number and a special sector region guaranteed stable after three JEDEC MSL-3 reflow cycles. Operating temperature ranges from -40°C to +125°C in an 8-pin SOP package.

Memory IC Feature Summary

• High endurance with 10^13 read/write cycles per byte
• Integrated unique 64-bit serial number for identification
• Special sector region ensuring data stability through multiple reflow processes
• Low power consumption with Deep Power Down and Hibernate modes

Memory IC Applications

• High-temperature environment applications requiring non-volatile storage
• Systems needing frequent data logging without backup batteries
• Industrial equipment requiring robust memory under thermal stress
• Devices utilizing SPI communication protocols for data acquisition

Memory IC Procurement Notes

Verify the specific ordering suffix matches the required shipping form, as the BCE1 designation corresponds to tube packaging. Confirm that the application circuitry supports the specified 1.8 V to 3.6 V operating voltage range. Ensure the design accommodates the Moisture Sensitivity Level 3 requirements during assembly. Check for any product change notifications regarding pinout or electrical characteristics before finalizing procurement.

Memory IC Selection Notes

Select this component when high-speed SPI access and extreme endurance are critical. It is suitable for designs where battery-backed SRAM is undesirable due to size or maintenance constraints. Consider the special sector feature if storing calibration data or configuration parameters that must survive manufacturing reflow. Evaluate power budgets against the standby and deep power down current specifications for energy-efficient operation.

Memory IC Part Context

This part belongs to the MB85RS4MTY FeRAM family manufactured by RAMXEED Limited, formerly Fujitsu Semiconductor Memory Solutions Limited. The series offers non-volatile memory solutions combining the speed of SRAM with the retention of Flash. The MB85RS4MTY variant specifically targets high-temperature reliability and high-cycle durability applications across industrial and automotive sectors.

Memory IC Replacement Considerations

Direct substitutes include other parts within the MB85RS4MTY series such as MB85RS4MTYPN-G-AWEWE1 for DFN packaging. Verify compatibility with existing SPI controller logic and voltage levels. Review datasheet differences between package types to ensure mechanical fit and thermal performance meet system requirements.