MB85RS4MTYPF-G-BCERE1

Memory IC Overview

The MB85RS4MTYPF-G-BCERE1 is a 4 Mbit (512 K × 8) Ferroelectric Random Access Memory (FeRAM) utilizing SPI interface technology. It operates within a supply voltage range of 1.8 V to 3.6 V and supports clock frequencies up to 50 MHz for most commands, with specific limits of 40 MHz for READ and 10 MHz for SSRD operations. The device functions across an ambient temperature range of -40°C to +125°C and is housed in an 8-pin plastic SOP package.

Memory IC Feature Summary

• High endurance capability supporting 10^13 read/write operations per byte without requiring backup batteries.
• Includes a dedicated special sector region and unique serial number storage that remain stable through multiple reflow cycles.
• Supports deep power down and hibernate modes to significantly reduce standby current consumption.

Memory IC Applications

• Data logging in high-temperature industrial environments
• Configuration storage in automotive electronics
• Non-volatile memory for devices requiring frequent write cycles

Memory IC Procurement Notes

Verify the ordering suffix to confirm the specific shipping form and package type. Ensure compatibility with the required operating voltage and temperature range for the target application environment before finalizing procurement.

Memory IC Selection Notes

Select this component when high write endurance and fast write speeds are critical compared to Flash or EEPROM alternatives. Consider the 50 MHz SPI speed and low power modes if system performance and energy efficiency are primary design constraints.

Memory IC Part Context

This part belongs to the MB85RS4MTY series of FeRAM devices manufactured by RAMXEED. It represents a continuation of Fujitsu Semiconductor's legacy memory solutions, maintaining original part numbering while offering updated manufacturing support.

Memory IC Replacement Considerations

MB85RS4MTYPF-G-BCE1