MB85RS4MTYPN-G-AWEWE1

Memory IC Overview

The MB85RS4MTYPN-G-AWEWE1 is a 4Mbit (512 K × 8) Ferroelectric Random Access Memory (FeRAM) utilizing SPI interface. It operates within a supply voltage range of 1.8 V to 3.6 V and supports clock frequencies up to 50 MHz. The device features an operating temperature range from -40 °C to +125 °C and includes a unique 64-bit serial number. It offers high endurance of 10^13 read/write operations per byte and data retention exceeding 4.2 years at +125 °C. The component is housed in an 8-pin plastic DFN package measuring 5 mm × 6 mm.

Memory IC Feature Summary

• Non-volatile memory architecture providing high endurance without requiring backup batteries.
• Includes a dedicated special sector region with data stability guaranteed through multiple reflow cycles.
• Supports deep power down and hibernate modes for significant standby current reduction.
• Features a unique 64-bit serial number and manufacturer ID accessible via specific commands.

Memory IC Applications

• High-temperature environment applications
• Systems requiring frequent write operations with low latency
• Applications needing persistent storage of unique identifiers or serial numbers

Memory IC Procurement Notes

Verify the ordering suffix AWEWE1 corresponds to the 8-pin plastic DFN package and embossed carrier tape shipping form. Confirm that the minimum shipping quantity aligns with project requirements, as specified in the ordering information section of the datasheet. Ensure compatibility with the specified moisture sensitivity level and reflow conditions during assembly.

Memory IC Selection Notes

Select this component when a non-volatile memory solution with high write endurance and fast access times is required. It is suitable for designs operating between 1.8 V and 3.6 V. Consider the 8-pin DFN package dimensions for PCB layout constraints. Verify that the system can support SPI Mode 0 and Mode 3 communication protocols.

Memory IC Part Context

This part belongs to the MB85RS4MTY series of FeRAM devices manufactured by RAMXEED Limited. The series maintains compatibility with previous Fujitsu Semiconductor part numbering conventions. The technology combines ferroelectric process with silicon gate CMOS for nonvolatile memory cells, targeting robust performance in demanding thermal environments.

Memory IC Replacement Considerations

Direct substitutes include other MB85RS4MTY variants such as MB85RS4MTYPF-G-BCE1 or MB85RS4MTYPF-G-BCERE1, provided the package type (SOP vs. DFN) and shipping format are compatible with the design.

Memory IC FAQ

What is the maximum operating frequency of the SPI interface?

The maximum operating frequency is 50 MHz for most commands, though it is limited to 40 MHz for READ commands and 10 MHz for SSRD commands.

How is data retention defined for this component?

Data retention is specified as more than 4.2 years at +125 °C, 13.7 years at +105 °C, and 50.4 years at +85 °C.

Is the special sector region protected against reflow damage?

Yes, data storage in the special sector region is guaranteed after three times reflow based on JEDEC MSL-3 standard conditions.