MB85RS4MTYPN-GS-AWEWE1

Memory IC Overview

The MB85RS4MTYPN-GS-AWEWE1 is a 4Mbit (512 K x 8) Ferroelectric Random Access Memory (FeRAM) chip compliant with AEC-Q100 standards. It utilizes a Serial Peripheral Interface (SPI) supporting modes 0 and 3, with a maximum operating frequency of 50 MHz. The device operates within a supply voltage range of 1.8 V to 3.6 V and functions across an ambient temperature range of -40°C to +125°C. It features high endurance of 10^13 read/write operations per byte and includes a unique 64-bit serial number. The component is housed in an 8-pin plastic DFN package measuring 5 mm by 6 mm.

Memory IC Feature Summary

• AEC-Q100 automotive qualification for high-temperature reliability
• High endurance of 10^13 write cycles per byte
• Integrated special sector region stable after reflow soldering
• Unique 64-bit serial number identification

Memory IC Applications

• Automotive electronic systems requiring high-temperature stability
• Data logging applications needing frequent write operations
• Industrial control systems demanding long-term data retention

Memory IC Procurement Notes

Verify the specific ordering suffix PN-GS-AWEWE1 corresponds to the embossed carrier tape shipping form with a minimum quantity of 1500 units. Confirm that the 8-pin plastic DFN package dimensions match the design footprint requirements. Ensure the SPI interface configuration aligns with the master controller's clock polarity and phase settings.

Memory IC Selection Notes

Select this component when high-speed SPI communication up to 50 MHz is required alongside extreme write endurance. The wide operating voltage range supports both 1.8 V and 3.3 V logic levels. The AEC-Q100 certification makes it suitable for automotive environments where standard commercial memory would fail due to thermal stress or limited write cycles.

Memory IC Part Context

This part belongs to the RAMXEED MB85RS4MTY family of FeRAM devices. RAMXEED continues the legacy of Fujitsu Semiconductor Memory Solutions Limited, maintaining original part numbering conventions. The technology leverages ferroelectric process and silicon gate CMOS processes to create nonvolatile memory cells without backup batteries.

Memory IC Replacement Considerations

MB85RS4MTYPNF-GS-AWEWE1