MB85RS512LYPN-G-AMEWE1

Memory IC Overview

The MB85RS512LYPN-G-AMEWE1 is a 512Kbit (64K x 8) Ferroelectric Random Access Memory (FeRAM) integrated circuit manufactured by RAMXEED. It utilizes a Serial Peripheral Interface (SPI) for communication and operates within a supply voltage range of 1.7 V to 1.95 V. The device supports a maximum operating frequency of 50 MHz and functions across an ambient temperature range of -40°C to +125°C. It is housed in an 8-pin plastic DFN package measuring 5mm x 6mm.

Memory IC Feature Summary

• High endurance capability supporting up to 10^13 read/write operations per byte, significantly exceeding traditional Flash memory limits.
• Includes a dedicated special sector region of 256 words that guarantees data stability after three reflow cycles conforming to JEDEC MSL-3 standards.
• Features a unique 64-bit serial number and Unique ID stored in nonvolatile memory regions that remain stable through reflow processes.
• Provides hardware-level write protection via the WP pin and status register bits, allowing configurable block protection for the main memory array.

Memory IC Applications

• Automotive electronic systems requiring high-temperature reliability
• Industrial equipment needing frequent data logging and high endurance
• Smart metering devices requiring long-term data retention without backup batteries

Memory IC Procurement Notes

Verify the specific ordering suffix to confirm the package type and shipping format. The AMEWE1 suffix indicates an 8-pin plastic DFN package supplied in embossed carrier tape. Confirm compatibility with the required SPI mode and voltage levels before integration. Check for any recent Product Change Notifications regarding material or manufacturing updates.

Memory IC Selection Notes

Select this component when applications demand extreme write endurance and fast write speeds compared to Flash or EEPROM technologies. The narrow 1.7V to 1.95V operating voltage range requires careful power supply design. Ensure the system supports SPI Mode 0 or Mode 3 protocols. Consider the DFN package dimensions if board space is constrained.

Memory IC Part Context

This part belongs to the MB85RS512LY family of FeRAM devices from RAMXEED, formerly Fujitsu Semiconductor. The series is designed for nonvolatile memory applications where data retention and high-speed writing are critical. The LY variant specifically targets high-temperature environments, distinguishing it from standard commercial grade parts.

Memory IC Replacement Considerations

Direct replacements must match the 512Kbit capacity, SPI interface, and 1.7V-1.95V voltage range. Verify pinout compatibility between SOP and DFN packages if form factor changes are permitted. Cross-reference with other RAMXEED FeRAM models for similar endurance and temperature specifications.

Memory IC FAQ

Is the data in the special sector guaranteed after reflow?

Yes, the special sector region (256 words) is explicitly guaranteed to retain data after three reflow cycles based on JEDEC MSL-3 standard conditions.

Can the serial number be rewritten after programming?

No, the serial number region allows writing only once via the WRSN command. Once written, it is protected and cannot be overwritten.

What happens if the HOLD pin is pulled low during operation?

Pulling the HOLD pin low interrupts serial input/output without deselecting the chip. The SO output becomes High-Z, and SCK/SI inputs are ignored until the HOLD pin returns high.