MB85RS512TPNF-G-JNE1

Memory IC Overview

The MB85RS512TPNF-G-JNE1 is a 512Kbit (64 K x 8) Ferroelectric Random Access Memory (FeRAM) utilizing SPI interface technology. It operates within a supply voltage range of 1.8 V to 3.6 V and supports clock frequencies up to 25 MHz at 1.8–2.7 V, and up to 30 MHz at 2.7–3.6 V. The Fast Read command allows operation up to 40 MHz under the higher voltage condition. The device features high endurance of 10^13 read/write operations per byte and data retention exceeding 10 years at +85°C. It is housed in an 8-pin plastic SOP package.

Memory IC Feature Summary

• Nonvolatile memory architecture eliminates the need for backup batteries while retaining data without power.
• Serial Peripheral Interface (SPI) support compatible with Mode 0 and Mode 3 protocols.
• High endurance capability offering 10^13 write cycles per byte, significantly surpassing Flash and EEPROM limits.
• Integrated block protection and write protect mechanisms controlled via status register bits.

Memory IC Applications

• Data logging systems requiring frequent write operations
• Industrial control applications needing reliable nonvolatile storage
• Embedded systems utilizing microcontrollers with SPI ports

Memory IC Procurement Notes

Verify the specific ordering suffix to confirm the shipping form, as JNE1 indicates tube packaging. Confirm RoHS compliance and REACH status requirements against project specifications. Ensure the selected voltage range aligns with the required operating frequency, as maximum clock speeds vary between 1.8V-2.7V and 2.7V-3.6V ranges. Check for any product change notifications regarding mold resin or assembly sources before finalizing procurement.

Memory IC Selection Notes

Select this component when high endurance and fast write speeds are critical compared to Flash or EEPROM alternatives. Choose based on the required operating voltage; use the FSTRD command only if the system operates at 2.7 V to 3.6 V to achieve 40 MHz speeds. Ensure the design accommodates the 8-pin SOP footprint and considers the internal pull-up on the Chip Select pin. Verify that the application does not require soldering before programming, as data written prior to reflow cannot be guaranteed.

Memory IC Part Context

This part belongs to the MB85RS512T series of FeRAM devices manufactured by RAMXEED Limited, formerly Fujitsu Semiconductor Memory Solutions Limited. The series maintains original Fujitsu part numbering conventions. The device is designed for applications demanding high reliability and rapid data access without the latency associated with traditional nonvolatile memories.

Memory IC Replacement Considerations

MB85RS512TPNF-G-AWE2 serves as a similar alternative within the same manufacturer lineup.

Memory IC FAQ

What is the impact of reflow soldering on pre-programmed data?

Data written to the memory before reflow processing cannot be guaranteed. Programming should be performed after the reflow process is complete.

How does the Hold pin function during serial communication?

When the HOLD pin is low while CS is low, serial input/output is interrupted without deselecting the chip. SO becomes High-Z, and SCK/SI inputs are ignored until HOLD returns high.