MB85RS512TYPNF-G-BCERE1

Memory IC Overview

The RAMXEED MB85RS512TYPNF-G-BCERE1 is a 512Kbit (64K x 8) Ferroelectric Random Access Memory (FeRAM) integrated circuit. It utilizes a Serial Peripheral Interface (SPI) operating at frequencies up to 50 MHz. The device supports an operating supply voltage range of 1.8 V to 3.6 V and functions within an ambient temperature range of -40°C to +125°C. It is housed in an 8-pin plastic SOP package with a lead pitch of 1.27 mm.

Memory IC Feature Summary

• High endurance capability supporting 10^13 read/write operations per byte, significantly exceeding Flash memory limits.
• Includes a dedicated special sector region of 256 words x 8 bits designed to retain data integrity through three reflow cycles compliant with JEDEC MSL-3 standards.
• Features a unique 64-bit serial number stored in nonvolatile memory that remains stable before and after soldering processes.
• Supports multiple low-power operational modes including Deep Power Down and Hibernate to minimize current consumption.

Memory IC Applications

• Automotive electronics requiring high-temperature reliability
• Industrial control systems needing frequent data logging
• Smart metering devices requiring long-term data retention

Memory IC Procurement Notes

Verify the specific ordering suffix BCERE1 corresponds to the embossed carrier tape shipping form with a minimum quantity of 1500 units. Confirm the manufacturer designation as RAMXEED Limited, formerly Fujitsu Semiconductor Memory Solutions Limited, to ensure correct part identification during sourcing.

Memory IC Selection Notes

Select this component for designs requiring SPI connectivity and robust write endurance. Ensure the system voltage falls within the 1.8 V to 3.6 V range. Consider the 8-pin SOP footprint for PCB layout. Verify if the special sector or unique ID features are necessary for the specific application requirements.

Memory IC Part Context

This FeRAM belongs to the MB85RS512TY series, which provides nonvolatile storage without backup batteries. It replaces traditional SRAM or Flash solutions where speed and endurance are critical. The technology combines ferroelectric process with silicon gate CMOS for reliable data storage.

Memory IC Replacement Considerations

MB85RS512TYPNF-G-BCE1 (Tube packaging variant)

Memory IC FAQ

How does the device handle data retention after soldering?

Data written before reflow is not guaranteed. However, the special sector region and serial number region are specifically designed to remain stable through three reflow cycles meeting JEDEC MSL-3 conditions.

What is the maximum operating frequency?

The device supports a maximum clock frequency of 50 MHz for most commands, though specific commands like READ and SSRD have lower maximum frequency limits of 40 MHz and 10 MHz respectively.