MB85RS64VYPNF-G-AWE2

Memory IC Overview

The MB85RS64VYPNF-G-AWE2 is a 64Kbit (8K x 8) Ferroelectric Random Access Memory (FeRAM) utilizing SPI interface. It operates within a voltage range of 2.7V to 5.5V and supports clock frequencies up to 25 MHz at lower voltages and 33 MHz at higher voltages. The device features high endurance of 10^13 read/write operations per byte and data retention exceeding 5.9 years at +125°C. It functions across an ambient temperature range of -40°C to +125°C and is housed in an 8-pin plastic SOP package.

Memory IC Feature Summary

• Nonvolatile memory cells retain data without backup batteries, offering significantly higher endurance than Flash or EEPROM.
• Serial Peripheral Interface (SPI) supports Mode 0 and Mode 3 with no write waiting time required.
• Includes programmable block protection and write protect mechanisms via status register control.
• Features low power consumption modes including standby and sleep states.

Memory IC Applications

• Industrial systems requiring frequent data logging
• Automotive electronics meeting AEC-Q100 standards
• Smart metering and utility infrastructure
• Medical devices needing reliable nonvolatile storage

Memory IC Procurement Notes

Verify the specific ordering suffix corresponds to the tube packaging format indicated by the part number structure. Confirm that the manufacturer designation aligns with RAMXEED Limited as the successor to Fujitsu Semiconductor Memory Solutions. Ensure compatibility with the specified 8-pin SOP dimensions for PCB layout integration.

Memory IC Selection Notes

Select this component when high cycle endurance and fast write speeds are critical compared to traditional flash technologies. Consider the operating voltage range and temperature specifications to ensure suitability for the target environment. Evaluate the SPI interface requirements against the microcontroller capabilities for proper system integration.

Memory IC Part Context

This part belongs to the MB85RS64VY series of FeRAM devices manufactured by RAMXEED. The series maintains the legacy part numbering and technical specifications established by Fujitsu Semiconductor. It represents a continuation of ferroelectric memory solutions designed for robustness and longevity in embedded applications.

Memory IC Replacement Considerations

MB85RS64VYPNF-G-BCE1

Memory IC FAQ

What is the maximum endurance of the memory cells?

The memory cells support 10^13 read/write operations per byte.

How does the device handle data retention at high temperatures?

Data retention is guaranteed for more than 5.9 years at an ambient temperature of +125°C.