MB85RS64VYPNF-G-BCERE1

Memory IC Overview

The MB85RS64VYPNF-G-BCERE1 is a 64 Kbit Ferroelectric Random Access Memory (FeRAM) IC manufactured by RAMXEED. It features an SPI interface with a maximum clock frequency of 25 MHz at 2.7 V to 4.5 V and 33 MHz at 4.5 V to 5.5 V. The device operates within a supply voltage range of 2.7 V to 5.5 V and supports temperatures from -40 °C to +125 °C. It offers high endurance of 10^13 read/write operations per byte and data retention exceeding 5.9 years at +125 °C. The component is housed in an 8-pin plastic SOP package.

Memory IC Feature Summary

• Nonvolatile memory architecture utilizing ferroelectric process technology for battery-free data retention.
• Serial Peripheral Interface (SPI) support compatible with Mode 0 and Mode 3 protocols.
• High endurance capability allowing up to 10^13 read/write cycles per byte.
• Integrated block protection and write protect mechanisms via status register configuration.

Memory IC Applications

• Industrial control systems requiring frequent data logging
• Automotive electronics compliant with AEC-Q100 standards
• Smart metering devices needing long-term data retention

Memory IC Procurement Notes

Verify the specific ordering suffix BCERE1 corresponds to the embossed carrier tape shipping form with a minimum quantity of 1500 units. Confirm that the component meets RoHS compliance requirements and check for any Product Change Notifications (PCN) related to assembly sites or material specifications before finalizing procurement orders.

Memory IC Selection Notes

Select this component when a nonvolatile memory solution requires high endurance and fast write speeds without backup batteries. Ensure the system design accommodates the 2.7 V to 5.5 V operating voltage range and the -40 °C to +125 °C temperature environment. Verify that the microcontroller supports the required SPI modes and that the 8-pin SOP package fits the PCB layout constraints.

Memory IC Part Context

This part belongs to the MB85RS64VY series of FeRAM devices produced by RAMXEED, formerly Fujitsu Semiconductor Memory Solutions Limited. The series utilizes silicon gate CMOS process technology for forming nonvolatile memory cells. The MB85RS64VYPNF-G-BCERE1 variant specifically denotes the 8-pin plastic SOP package with embossed carrier tape packaging.

Memory IC Replacement Considerations

Direct substitutes include other variants within the MB85RS64VY family such as MB85RS64VPNF-G-JNE1 or MB85RS64TPNF-G-AMERE2, provided they match the required package type and voltage specifications. Verify pin compatibility and electrical characteristics before substitution.