Diode Arrays MBR12040CTR product image

MBR12040CTR

$48.80
  • Description:DIODE MOD SCHOTT 40V 120A 2TOWER
  • Series:-

SKU:8b290db303c3 Category: Brand:

  
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MBR12040CTR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 40V 120A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR12040CTR

  • Description:DIODE MOD SCHOTT 40V 120A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):40 V
  • Current - Average Rectified (Io) (per Diode):120A (DC)
  • Voltage - Forward (Vf) (Max) @ If:650 mV @ 120 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR12040CTR

MBR12040CTR

Diode Arrays Overview

The GeneSiC Semiconductor MBR12040CTR is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 40 V and an average forward current of 120 A per package. It features a Twin Tower screw-mount package with an electrically isolated base plate. The device supports a junction temperature range from -55 °C to +150 °C, with a maximum forward voltage of 0.70 V at Tj = 100 °C and a thermal resistance of 0.80 °C/W per leg.

Diode Arrays Feature Summary

  • High surge capability with an 800 A peak forward surge current rating
  • Electrically isolated base plate design for mounting flexibility
  • Not ESD sensitive during handling and assembly

Diode Arrays Applications

  • DC-DC converters
  • Free-wheeling rectification in motor drives
  • Power supply output rectification

Diode Arrays Procurement Notes

Verify the specific part number suffix against official documentation to confirm terminal configuration details. Confirm RoHS compliance status and check for any discontinuation notices prior to finalizing procurement plans. Ensure thermal management solutions align with the specified junction-to-case thermal resistance requirements.

Diode Arrays Selection Notes

Select this component for applications requiring low forward voltage drop and high current handling in a compact screw-mount form factor. Consider the 40 V reverse voltage rating and 120 A continuous current capacity when designing circuits. Evaluate the operating temperature range to ensure suitability for the intended environmental conditions.

Diode Arrays Part Context

This component belongs to the MBR120 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series offers various voltage ratings from 20 V to 60 V within the same Twin Tower package footprint, allowing for design flexibility while maintaining consistent mechanical and thermal characteristics across different voltage options.

Diode Arrays Replacement Considerations

Direct replacements include other MBR120 series variants such as MBR12030CTR or MBR12020CTR if lower voltage ratings are acceptable. Verify that substitute parts match the 120 A current rating and Twin Tower package dimensions for direct interchangeability.

Diode Arrays FAQ

What is the maximum forward voltage drop for the MBR12040CTR?

The maximum forward voltage is 0.70 V measured at a junction temperature of 100 °C.

Is the MBR12040CTR sensitive to electrostatic discharge?

No, the datasheet specifies that the device is not ESD sensitive.

What is the thermal resistance from junction to case?

The thermal resistance (RθJC) is 0.80 °C/W per leg.

MBR12040CTRMBR12040CTR
$48.80
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