Diode Arrays MBR15H50CT-E3/45 product image

MBR15H50CT-E3/45

  • Description:DIODE ARR SCHOT 50V 7.5A TO220AB
  • Series:-

SKU:6cf406e66073 Category: Brand:

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MBR15H50CT-E3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 50V 7.5A TO220AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR15H50CT-E3/45

  • Description:DIODE ARR SCHOT 50V 7.5A TO220AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):50 V
  • Current - Average Rectified (Io) (per Diode):7.5A
  • Voltage - Forward (Vf) (Max) @ If:730 mV @ 7.5 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:50 µA @ 50 V
  • Operating Temperature - Junction:-65°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for MBR15H50CT-E3/45

MBR15H50CT-E3/45

Diode Arrays Overview

The MBR15H50CT-E3/45 is a dual common-cathode Schottky rectifier manufactured by Vishay General Semiconductor. It utilizes high barrier technology to deliver improved performance at elevated temperatures. The device features a TO-220AB package and provides a maximum repetitive peak reverse voltage of 50 V with a total average forward rectified current of 15 A (7.5 A per diode). Key electrical characteristics include a maximum instantaneous forward voltage of 0.63 V at 15 A, a typical reverse leakage current of 50 µA, and a non-repetitive peak forward surge current capability of 150 A.

Diode Arrays Feature Summary

  • High barrier technology for enhanced high-temperature operation
  • Guardring structure designed for overvoltage protection
  • Low forward voltage drop contributing to reduced power losses
  • Capable of high frequency operation

Diode Arrays Applications

  • Low voltage, high frequency rectification in switching mode power supplies
  • Freewheeling diodes in DC-to-DC converters
  • Polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm the correct package type and delivery mode. The E3 suffix indicates compliance with RoHS directives and JESD 201 class 1A whisker testing standards. Confirm that the component meets the required environmental specifications for the intended application before finalizing procurement.

Diode Arrays Selection Notes

Select this component when a dual common-cathode configuration is required for low voltage applications. Ensure the design accommodates the specified thermal resistance values for the TO-220AB package. Validate that the operating junction temperature remains within the -65 °C to +175 °C range under all expected load conditions.

Diode Arrays Part Context

This part belongs to the MBR(F,B)15HxxCT series from Vishay General Semiconductor. The series encompasses variants with different reverse voltage ratings ranging from 35 V to 60 V. All members share identical physical dimensions and thermal characteristics while differing in their maximum repetitive peak reverse voltage capabilities.

Diode Arrays Replacement Considerations

MBR15H45CT-E3/45

Diode Arrays FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 175 °C.

How is the average forward current distributed between the diodes?

The total device average forward rectified current is 15 A, which is distributed as 7.5 A per diode.

Does the component meet lead-free requirements?

Yes, the E3 suffix indicates the component is lead-free and complies with RoHS 2002/95/EC directives.

MBR15H50CT-E3/45MBR15H50CT-E3/45

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