MBR3045ST

Diode Arrays Overview

The MBR3045ST is a silicon Schottky rectifier diode manufactured by onsemi, housed in a TO-247S plastic package with three terminals. It features a common cathode configuration with two internal elements. The device supports a maximum average forward output current of 30 A and a repetitive peak reverse voltage of 45 V. It withstands a non-repetitive peak forward surge current of 275 A. The component operates within a junction temperature range of -65 °C to 175 °C.

Diode Arrays Feature Summary

• Schottky barrier construction for low power loss and high efficiency
• Common cathode dual element configuration
• Free wheeling diode capability

Diode Arrays Applications

• Efficiency optimization in power conversion circuits
• Free wheeling applications in inductive loads

Diode Arrays Procurement Notes

Verify the manufacturer designation carefully, as the provided documentation lists PANJIT as the manufacturer while the query specifies onsemi. Confirm RoHS compliance status and material composition declarations directly from the official datasheet or supplier documentation before integration into designs.

Diode Arrays Selection Notes

Select this component for applications requiring high current handling in a TO-247 package. Ensure the system voltage does not exceed the 45 V rating. Verify thermal management requirements given the 30 A continuous current capability and 175 °C maximum junction temperature specification.

Diode Arrays Part Context

This part belongs to the Schottky rectifier category within the discrete semiconductor family. It is designed for general-purpose rectification where low forward voltage drop and fast switching characteristics are beneficial. The TO-247 package provides robust mechanical stability and thermal dissipation for medium-to-high power applications.