Diode Arrays MBR40035CTR product image

MBR40035CTR

$70.04
  • Description:DIODE MOD SCHOTT 35V 200A 2TOWER
  • Series:-

SKU:ec6f2b16545d Category: Brand:

  
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MBR40035CTR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 35V 200A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR40035CTR

  • Description:DIODE MOD SCHOTT 35V 200A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max):35 V
  • Current - Average Rectified (Io) (per Diode):200A
  • Voltage - Forward (Vf) (Max) @ If:700 mV @ 200 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 35 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR40035CTR

MBR40035CTR

Diode Arrays Overview

The GeneSiC Semiconductor MBR40035CTR is a silicon power Schottky diode module featuring a Twin Tower package. It provides an average forward current of 400 A per package and a repetitive peak reverse voltage of 35 V. The device exhibits a maximum forward voltage of 0.70 V at 25 °C and supports a peak forward surge current of 3000 A. Thermal resistance from junction to case is 0.35 °C/W per leg. Operating and storage temperatures range from -55 °C to +150 °C.

Diode Arrays Feature Summary

  • High surge capability with 3000 A peak forward surge current support
  • Electrically isolated base plate for mounting flexibility
  • Not ESD sensitive during handling and assembly

Diode Arrays Applications

  • DC-DC converters
  • Free-wheeling rectification in motor drives
  • Power supply output rectification

Diode Arrays Procurement Notes

Verify the specific suffix 'CTR' against official documentation, as datasheets indicate reversed leads for 'R' devices. Confirm availability status directly with authorized distributors or Navitas Semiconductor, as this component may be subject to discontinuation notices. Ensure thermal interface materials match the specified junction-to-case thermal resistance requirements for proper heat dissipation.

Diode Arrays Selection Notes

Select this module when high current capacity and low forward voltage drop are required in compact power applications. The Twin Tower package facilitates efficient screw mounting and heat sinking. Consider the 35 V rating for low-voltage DC systems where efficiency is critical. Verify lead orientation if using the 'CTR' variant compared to standard configurations.

Diode Arrays Part Context

This component belongs to the MBR400 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor, now part of Navitas Semiconductor. The series includes variants ranging from 20 V to 40 V reverse voltage with consistent 400 A current ratings. These modules are designed for high-efficiency power conversion applications requiring robust surge handling capabilities.

Diode Arrays Replacement Considerations

Check for direct substitutes within the MBR400 series such as MBR40020CT or MBR40040CT if voltage ratings allow. Verify pinout compatibility, especially regarding lead reversal in 'R' suffix versions. Cross-reference thermal resistance and package dimensions with alternative manufacturers like Vishay or Infineon for equivalent Twin Tower packages.

MBR40035CTRMBR40035CTR
$70.04
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