Diode Arrays MBR40040CTRL product image

MBR40040CTRL

$40.38
  • Description:DIODE MOD SCHOTT 40V 200A 2TOWER
  • Series:-

SKU:d4cb905ef1af Category: Brand:

  
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MBR40040CTRL is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 40V 200A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR40040CTRL

  • Description:DIODE MOD SCHOTT 40V 200A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):40 V
  • Current - Average Rectified (Io) (per Diode):200A
  • Voltage - Forward (Vf) (Max) @ If:600 mV @ 200 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3 mA @ 40 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR40040CTRL

MBR40040CTRL

Diode Arrays Overview

The MBR40040CTRL is a Schottky barrier rectifier manufactured by GeneSiC Semiconductor, designed for high-efficiency power conversion applications. It features a Twin Tower package configuration with two elements in a common anode arrangement. The device supports a repetitive peak reverse voltage of 40 V and provides a maximum average forward current of 200 A per element. Key electrical characteristics include a low maximum forward voltage of 0.65 V at specified conditions and a non-repetitive peak forward surge current capability of 3000 A. The component operates within a junction temperature range of -40 °C to 175 °C.

Diode Arrays Feature Summary

  • Twin Tower Package Design
  • Common Anode Configuration
  • High Surge Capability

Diode Arrays Applications

  • Power Supply Systems
  • DC-DC Converters
  • Free-Wheeling Rectification

Diode Arrays Procurement Notes

Verify the specific suffix 'CTRL' against official GeneSiC documentation to confirm lead orientation or pinout variations compared to standard variants. Ensure thermal management requirements align with the 175 °C junction temperature rating during system integration. Cross-reference datasheet specifications for exact forward voltage drop values under intended operating currents to validate efficiency targets.

Diode Arrays Selection Notes

Select this component when a common anode Schottky rectifier with a 40 V rating and 200 A continuous current capacity is required. The Twin Tower package facilitates efficient heat dissipation and simplified mounting in high-power density designs. Consider the low forward voltage characteristic for minimizing conduction losses in synchronous rectification or freewheeling circuits where efficiency is critical.

Diode Arrays Part Context

This part belongs to the MBR400xxCTR series of Silicon Power Schottky Diodes from GeneSiC Semiconductor. The series offers various voltage ratings ranging from 45 V to 100 V while maintaining a consistent 400 A class current handling capability across different package types. The Twin Tower variant specifically addresses space constraints and thermal performance needs in modern power electronics architectures.

Diode Arrays Replacement Considerations

Compatible substitutes within the same family include MBR40045CTR and MBR40060CTR, which share identical package dimensions and thermal characteristics but offer higher reverse voltage ratings. Verify that the alternative part's forward voltage and surge current specifications meet or exceed the design requirements of the original application.

MBR40040CTRLMBR40040CTRL
$40.38
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