Diode Arrays MBR40060CT product image

MBR40060CT

$70.04
  • Description:DIODE MOD SCHOTT 60V 200A 2TOWER
  • Series:-

SKU:0a3f792b0fe7 Category: Brand:

  
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MBR40060CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 60V 200A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR40060CT

  • Description:DIODE MOD SCHOTT 60V 200A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):60 V
  • Current - Average Rectified (Io) (per Diode):200A
  • Voltage - Forward (Vf) (Max) @ If:800 mV @ 200 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:5 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR40060CT

MBR40060CT

Diode Arrays Overview

The GeneSiC Semiconductor MBR40060CT is a silicon power Schottky diode module designed for high-efficiency rectification. It features a Twin Tower package configuration with an average forward current rating of 400 A per package and a repetitive peak reverse voltage of 60 V. The maximum forward voltage is specified at 0.75 V per leg, while the thermal resistance from junction to case is 0.35 °C/W per leg. The device supports an operating temperature range from -55 °C to +150 °C and offers a peak forward surge current capability of 3000 A.

Diode Arrays Feature Summary

  • High surge current capability for robust operation under transient conditions
  • Twin Tower package design optimized for efficient thermal management
  • Low forward voltage drop to minimize conduction losses
  • Not sensitive to electrostatic discharge

Diode Arrays Applications

  • Switching-mode power supplies
  • Free-wheeling rectification in DC-DC converters
  • High-frequency power conversion circuits

Diode Arrays Procurement Notes

Verify the specific suffix designation against official documentation to confirm terminal configuration, as reversed leads may be indicated by an 'R' suffix. Confirm RoHS compliance status through the manufacturer's latest product data sheet prior to integration. Ensure that the procurement channel provides valid traceability for this discrete component type.

Diode Arrays Selection Notes

Select the MBR40060CT when a 60 V blocking voltage and 400 A continuous current are required within a Twin Tower form factor. Evaluate the 0.35 °C/W thermal resistance against the system's heat sink capabilities to ensure junction temperatures remain within the 150 °C limit. Consider the 3000 A surge rating for applications involving significant inrush currents or short-circuit events.

Diode Arrays Part Context

This component belongs to the MBR400 series of silicon power Schottky diodes, which spans voltage ratings from 45 V to 100 V. The series utilizes a standardized Twin Tower package architecture to maintain consistent mechanical mounting and thermal interface characteristics across different voltage variants within the same current class.

Diode Arrays Replacement Considerations

Cross-reference with other MBR400 series variants such as MBR40045CT or MBR40080CT if voltage requirements differ. Verify pinout compatibility, particularly regarding lead orientation, before substituting with modules from other manufacturers offering similar current and voltage ratings.

MBR40060CTMBR40060CT
$70.04
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