MBR500150CT

Diode Arrays Overview

The GeneSiC Semiconductor MBR500150CT is a silicon power Schottky diode module featuring a Twin Tower package. It provides an average forward current of 500 A per package and supports repetitive peak reverse voltages from 150 V to 200 V. The device operates within a junction temperature range of -55 °C to +150 °C, with a maximum thermal resistance of 0.30 °C/W per leg.

Diode Arrays Feature Summary

• High surge capability
• Twin Tower package design
• Not ESD sensitive

Diode Arrays Applications

• High current rectification
• Power supply modules
• Industrial motor drives

Diode Arrays Procurement Notes

Verify the specific voltage rating suffix (e.g., 150 vs 200) as the series spans multiple ratings. Confirm terminal configuration details, noting that devices marked with 'R' have reversed leads compared to standard versions. Ensure compatibility with screw mount installations using the specified D-67 package dimensions.

Diode Arrays Selection Notes

Select this component for applications requiring high average forward current in a compact form factor. The low thermal resistance facilitates efficient heat dissipation in high-power environments. Consider the operating temperature range when designing thermal management systems for continuous operation near maximum limits.

Diode Arrays Part Context

This part belongs to the MBR500 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series utilizes a Twin Tower package architecture designed for robust performance in demanding power electronics applications, offering high reliability and surge handling capabilities.

Diode Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Verify pinout compatibility, particularly regarding lead orientation for 'R' variants, before substituting.