Diode Arrays MBR600150CTR product image

MBR600150CTR

$91.69
  • Description:DIODE MOD SCHOT 150V 300A 2TOWER
  • Series:-

SKU:c77b2e28e603 Category: Brand:

  
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MBR600150CTR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 150V 300A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR600150CTR

  • Description:DIODE MOD SCHOT 150V 300A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):150 V
  • Current - Average Rectified (Io) (per Diode):300A
  • Voltage - Forward (Vf) (Max) @ If:880 mV @ 300 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3 mA @ 150 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR600150CTR

MBR600150CTR

Diode Arrays Overview

The GeneSiC Semiconductor MBR600150CTR is a silicon power Schottky diode module featuring a Twin Tower package. It provides a repetitive peak reverse voltage of 150 V and an average forward current rating of 600 A per package. The device supports a junction temperature range from -55 °C to +150 °C. Key electrical parameters include a maximum forward voltage of 0.88 V at 300 A and a thermal resistance of 0.28 °C/W per leg. The module offers high surge capability with a peak forward surge current of 4000 A.

Diode Arrays Feature Summary

  • High surge current capability for robust operation under transient conditions
  • Twin Tower package design optimized for efficient thermal management
  • Low forward voltage drop characteristics to minimize conduction losses
  • Non-ESD sensitive construction for simplified handling

Diode Arrays Applications

  • High-frequency switching power supplies
  • DC-DC converter circuits
  • Motor drive freewheeling applications

Diode Arrays Procurement Notes

Verify the specific suffix 'CTR' against official documentation to confirm terminal configuration details, as datasheets indicate variations in lead orientation between standard and reversed types. Confirm RoHS compliance status and ensure the supplier provides valid traceability documents. Check for any discontinuation notices or lifecycle changes prior to finalizing procurement orders.

Diode Arrays Selection Notes

Select this component when high current capacity and low forward voltage are critical for system efficiency. Ensure the application requires a 150 V blocking voltage rating. Verify that the mounting infrastructure supports the Twin Tower package dimensions and screw mount requirements. Evaluate thermal management solutions based on the specified junction-to-case thermal resistance.

Diode Arrays Part Context

This part belongs to the MBR600 series of silicon power Schottky rectifiers manufactured by GeneSiC Semiconductor. The series includes variants ranging from 150 V to 200 V reverse voltage ratings. These modules are designed for high-performance power conversion applications requiring reliable operation at elevated temperatures.

Diode Arrays Replacement Considerations

Consult official substitution guides for compatible alternatives within the same product family. Verify that any replacement maintains identical pinout configurations and mechanical dimensions to ensure compatibility with existing PCB layouts and cooling systems.

MBR600150CTRMBR600150CTR
$91.69
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