Diode Arrays MBR600200CTR product image

MBR600200CTR

$91.69
  • Description:DIODE MOD SCHOT 200V 300A 2TOWER
  • Series:-

SKU:1a396896ad79 Category: Brand:

  
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MBR600200CTR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 200V 300A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR600200CTR

  • Description:DIODE MOD SCHOT 200V 300A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io) (per Diode):300A
  • Voltage - Forward (Vf) (Max) @ If:920 mV @ 300 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3 mA @ 200 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR600200CTR

MBR600200CTR

Diode Arrays Overview

The GeneSiC Semiconductor MBR600200CTR is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 200 V and an average forward current of 600 A per package. It utilizes a Twin Tower package configuration with screw mounting capabilities. The device features a maximum junction-to-case thermal resistance of 0.28 °C/W per leg and supports an operating temperature range from -55 °C to +150 °C. Electrical characteristics include a maximum forward voltage of 0.92 V at 600 A and a peak forward surge current capability of 4000 A.

Diode Arrays Feature Summary

  • High surge current capability designed for robust power handling
  • Twin Tower package structure facilitating efficient thermal management
  • Non-ESD sensitive construction for simplified handling

Diode Arrays Applications

  • High-power DC/DC converters
  • Free-wheeling rectification in motor drives
  • Uninterruptible power supply (UPS) systems

Diode Arrays Procurement Notes

Verify the specific suffix designation against official documentation, as variations may indicate differences in lead configuration or terminal orientation. Confirm that the procurement channel provides authentic GeneSiC Semiconductor products to ensure compliance with specified electrical ratings and thermal performance standards.

Diode Arrays Selection Notes

Select this component when applications require high current capacity with low forward voltage drop. Ensure the cooling solution can maintain the junction temperature within the specified limits given the thermal resistance values. Verify that the system voltage does not exceed the 200 V repetitive peak reverse voltage rating under all transient conditions.

Diode Arrays Part Context

This module belongs to the MBR600 series of silicon power Schottky diodes, which are engineered for high-efficiency rectification in demanding power electronics environments. The series offers various voltage ratings while maintaining consistent current handling and packaging standards across the lineup.

Diode Arrays Replacement Considerations

Consult official substitution lists for compatible modules within the same series. Verify that any alternative part matches the 600 A current rating, 200 V blocking voltage, and Twin Tower mechanical footprint.

MBR600200CTRMBR600200CTR
$91.69
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