Diode Arrays MBR60035CT product image

MBR60035CT

$91.69
  • Description:DIODE MOD SCHOTT 35V 300A 2TOWER
  • Series:-

SKU:9efcfb220674 Category: Brand:

  
  • Quantity
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MBR60035CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 35V 300A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR60035CT

  • Description:DIODE MOD SCHOTT 35V 300A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):35 V
  • Current - Average Rectified (Io) (per Diode):300A
  • Voltage - Forward (Vf) (Max) @ If:750 mV @ 300 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR60035CT

MBR60035CT

Diode Arrays Overview

The GeneSiC Semiconductor MBR60035CT is a silicon power Schottky rectifier module rated for a repetitive peak reverse voltage of 35 V and an average forward current of 600 A per package. It utilizes a Twin Tower package configuration with screw mounting capabilities. The device features a maximum forward voltage of 0.75 V at 600 A and a thermal resistance of 0.28 °C/W per leg. Operating temperatures range from -55 °C to +150 °C, with a peak forward surge current capability of 4000 A.

Diode Arrays Feature Summary

  • High surge current capability designed for demanding power applications
  • ESD insensitive construction for robust handling
  • Twin Tower package design facilitating efficient thermal management

Diode Arrays Applications

  • DC-DC converters
  • Free-wheeling rectification in motor drives
  • Power factor correction circuits

Diode Arrays Procurement Notes

Verify the specific part number suffix against official documentation to confirm terminal configuration, as variants exist with reversed leads. Confirm RoHS compliance status and check for discontinuation notices prior to procurement. Ensure the supplier provides valid traceability documents matching the manufacturer's specifications.

Diode Arrays Selection Notes

Select this component based on its 35 V blocking voltage and 600 A continuous current rating. Evaluate the 0.28 °C/W junction-to-case thermal resistance for heatsink requirements. Consider the Twin Tower package dimensions for mechanical integration and verify that the operating temperature range meets the system's environmental constraints.

Diode Arrays Part Context

This component belongs to the MBR600 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series includes various voltage ratings from 20 V to 40 V, all sharing similar current and thermal characteristics. These modules are designed for high-efficiency power conversion applications requiring low forward voltage drop and high reliability.

Diode Arrays Replacement Considerations

Compatible substitutes within the same series include the MBR60020CT, MBR60030CT, and MBR60040CT. Verify that the alternative part's voltage rating meets or exceeds the circuit requirements. Ensure the physical package dimensions and terminal configurations are compatible with the existing board layout.

MBR60035CTMBR60035CT
$91.69
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