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MBR60045CTRL is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 45V 300A 2TOWER. Review the specifications below when checking this part for your BOM.
The GeneSiC Semiconductor MBR60045CTRL is a silicon Schottky rectifier module rated for 45 V DC blocking voltage and 600 A average forward current. It features a Twin Tower package with screw mount installation. Electrical characteristics include a maximum instantaneous forward voltage of 0.60 V per leg and a maximum thermal resistance of 0.28 °C/W junction-to-case per leg. The device supports an operating temperature range from -55 °C to +150 °C, with a peak forward surge current capability of 4000 A.
Verify the specific ordering suffix against official documentation to confirm terminal configuration and packaging details. Confirm availability status as distribution channels may vary. Ensure compatibility with existing thermal interface materials and mounting hardware specifications before procurement.
Select this component for applications requiring high current density and low conduction losses. Evaluate thermal design requirements based on the specified junction-to-case thermal resistance. Ensure the system voltage does not exceed the 45 V maximum DC blocking rating under all transient conditions.
This part belongs to the MBR600 series of silicon Schottky rectifiers from GeneSiC Semiconductor. The series is designed for high-efficiency power conversion applications. The Twin Tower package provides a compact solution for high-current modules in industrial power electronics.
Direct replacements must match the 45 V / 600 A rating and Twin Tower package. Verify pinout compatibility and thermal resistance values. Consider equivalent parts from the same manufacturer or other suppliers offering identical electrical and mechanical specifications.
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