Diode Arrays MBR60080CTR product image

MBR60080CTR

$91.69
  • Description:DIODE MOD SCHOTT 80V 300A 2TOWER
  • Series:-

SKU:f1a1865ee26a Category: Brand:

  
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MBR60080CTR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 80V 300A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR60080CTR

  • Description:DIODE MOD SCHOTT 80V 300A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):80 V
  • Current - Average Rectified (Io) (per Diode):300A
  • Voltage - Forward (Vf) (Max) @ If:880 mV @ 300 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR60080CTR

MBR60080CTR

Diode Arrays Overview

The GeneSiC Semiconductor MBR60080CTR is a silicon power Schottky diode module rated for an average forward current of 600 A and a repetitive peak reverse voltage of 80 V. It utilizes a Twin Tower package with screw mounting, offering a maximum forward voltage of 0.84 V per leg at Tj = 25 °C. The device supports a junction temperature range from -55 °C to +150 °C and provides a peak forward surge current capability of 4000 A.

Diode Arrays Feature Summary

  • High surge current capability
  • Twin Tower package design
  • Not ESD sensitive

Diode Arrays Applications

  • Power conversion systems
  • Industrial rectification circuits
  • DC-DC converter modules

Diode Arrays Procurement Notes

Verify the specific suffix 'CTR' against official documentation to confirm lead configuration details, as datasheets indicate reversed leads for 'R' devices. Confirm RoHS compliance status through manufacturer declarations. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values for reliable operation under load conditions.

Diode Arrays Selection Notes

Select this component for applications requiring high current handling in a compact form factor. The Twin Tower package facilitates efficient heat dissipation and robust mechanical stability via screw mounting. Evaluate thermal resistance parameters against system cooling capabilities to maintain junction temperatures within the specified operational limits during continuous conduction.

Diode Arrays Part Context

This module belongs to the MBR600 series, which encompasses various voltage ratings from 45 V to 100 V while maintaining a consistent 600 A current rating. The series utilizes silicon technology for Schottky rectification, providing low forward voltage drop characteristics suitable for high-efficiency power processing applications in industrial environments.

Diode Arrays Replacement Considerations

Compatible substitutes include other models within the MBR600 series such as MBR60045CTR or MBR60060CTR, provided the reverse voltage requirements are met. Verify that alternative components share the same Twin Tower package dimensions and terminal configurations to ensure mechanical compatibility without redesigning the mounting infrastructure.

MBR60080CTRMBR60080CTR
$91.69
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