MBRB1090CT-E3/4W

Diode Arrays Overview

The MBRB1090CT-E3/4W is a dual common-cathode Schottky rectifier manufactured by Vishay General Semiconductor. It utilizes Trench MOS Barrier Schottky (TMBS) technology to achieve low forward voltage drop and high efficiency. The device features a maximum repetitive peak reverse voltage of 90 V and an average rectified forward current of 10 A per diode. It is housed in a TO-220AB package with isolated tab for through-hole mounting. The junction temperature range extends from -65°C to 150°C, ensuring reliable operation in demanding thermal environments.

Diode Arrays Feature Summary

• Trench MOS Barrier Schottky technology reduces power losses and enhances overall system efficiency.
• Low forward voltage drop minimizes conduction losses during operation.
• High forward surge capability supports robust performance under transient load conditions.

Diode Arrays Applications

• Free-wheeling diodes in DC-DC converter circuits
• Power factor correction (PFC) circuits
• Isolated output rectification in switch-mode power supplies

Diode Arrays Procurement Notes

Verify the specific suffix against official Vishay documentation to confirm pinout configuration and packaging type. Ensure the component meets RoHS compliance requirements if mandated by your assembly standards. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component when designing circuits requiring efficient rectification at 90 V reverse voltage ratings. The dual common-cathode configuration simplifies schematic design for synchronous or asynchronous rectification topologies. Consider the TO-220AB package for applications necessitating direct heatsink mounting to manage thermal dissipation effectively without additional PCB space constraints.

Diode Arrays Part Context

This component belongs to Vishay's TMBS family, which integrates trench MOS gate technology with Schottky barrier principles. This architecture offers superior switching characteristics compared to standard PN junction diodes. The MBRB series is engineered for high-frequency applications where minimizing reverse recovery charge is critical for maintaining system stability and reducing electromagnetic interference.

Diode Arrays Replacement Considerations

Consult official Vishay substitution guides for verified equivalents. Generic replacements may differ in thermal resistance or reverse leakage characteristics. Verify that any substitute maintains the same dual common-cathode configuration and TO-220AB footprint to ensure mechanical compatibility.