Diode Arrays MBRB20100CT-E3/8W product image

MBRB20100CT-E3/8W

$1.78
  • Description:DIODE ARR SCHOT 100V 10A TO263AB
  • Series:TMBS®

SKU:b5b85ad651d0 Category: Brand:

  
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MBRB20100CT-E3/8W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 100V 10A TO263AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRB20100CT-E3/8W

  • Description:DIODE ARR SCHOT 100V 10A TO263AB
  • Series:TMBS®
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):10A
  • Voltage - Forward (Vf) (Max) @ If:800 mV @ 10 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:100 µA @ 100 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263AB (D2PAK)
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBRB20100CT-E3/8W

MBRB20100CT-E3/8W

Diode Arrays Overview

The MBRB20100CT-E3/8W is a dual common-cathode high voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It utilizes TMBS technology to achieve lower power losses and high efficiency with a low forward voltage drop. The device is housed in a TO-263AB (D2PAK) surface-mount package, suitable for automated assembly. Key electrical ratings include a maximum repetitive peak reverse voltage of 100 V and a total maximum average forward rectified current of 20 A (10 A per diode). It supports high frequency operation and features a high forward surge capability.

Diode Arrays Feature Summary

  • Trench MOS Schottky technology for reduced power losses
  • Low forward voltage drop for improved efficiency
  • High forward surge current capability
  • Meets JESD 22-B106 solder bath temperature requirements

Diode Arrays Applications

  • High frequency rectification in switching mode power supplies
  • Freewheeling diodes in DC/DC converters
  • Polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm the package type and delivery mode. The /8W suffix indicates tape and reel packaging. Confirm RoHS compliance status and material categorization details directly from the datasheet before procurement.

Diode Arrays Selection Notes

Select this component for applications requiring high voltage blocking and efficient rectification in surface-mount designs. Ensure the thermal management solution accommodates the junction-to-case thermal resistance. Validate that the operating junction temperature remains within the specified -65 °C to +150 °C range during system operation.

Diode Arrays Part Context

This part belongs to the MBR20xxxCT-E3 family of dual common-cathode Schottky rectifiers. It shares the same die specifications as through-hole variants like the MBR20100CT but offers a surface-mount form factor. The E3 suffix denotes lead-free terminals and RoHS compliance.

Diode Arrays Replacement Considerations

MBR20100CT-E3/4W

Diode Arrays FAQ

What is the maximum non-repetitive peak forward surge current?

The maximum non-repetitive peak forward surge current is 150 A per diode for an 8.3 ms single half sine-wave superimposed on rated load.

Does the device meet moisture sensitivity level 1?

Yes, the device meets MSL level 1 per J-ST-D-020, with a maximum peak reflow temperature of 245 °C for the TO-263AB package.

What is the typical thermal resistance junction-to-case?

The typical thermal resistance junction-to-case (RθJC) is 2.0 °C/W per diode.

MBRB20100CT-E3/8WMBRB20100CT-E3/8W
$1.78
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