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MBRB20100CT-E3/8W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 100V 10A TO263AB. Review the specifications below when checking this part for your BOM.
The MBRB20100CT-E3/8W is a dual common-cathode high voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It utilizes TMBS technology to achieve lower power losses and high efficiency with a low forward voltage drop. The device is housed in a TO-263AB (D2PAK) surface-mount package, suitable for automated assembly. Key electrical ratings include a maximum repetitive peak reverse voltage of 100 V and a total maximum average forward rectified current of 20 A (10 A per diode). It supports high frequency operation and features a high forward surge capability.
Verify the specific ordering suffix against the manufacturer's documentation to confirm the package type and delivery mode. The /8W suffix indicates tape and reel packaging. Confirm RoHS compliance status and material categorization details directly from the datasheet before procurement.
Select this component for applications requiring high voltage blocking and efficient rectification in surface-mount designs. Ensure the thermal management solution accommodates the junction-to-case thermal resistance. Validate that the operating junction temperature remains within the specified -65 °C to +150 °C range during system operation.
This part belongs to the MBR20xxxCT-E3 family of dual common-cathode Schottky rectifiers. It shares the same die specifications as through-hole variants like the MBR20100CT but offers a surface-mount form factor. The E3 suffix denotes lead-free terminals and RoHS compliance.
MBR20100CT-E3/4W
The maximum non-repetitive peak forward surge current is 150 A per diode for an 8.3 ms single half sine-wave superimposed on rated load.
Yes, the device meets MSL level 1 per J-ST-D-020, with a maximum peak reflow temperature of 245 °C for the TO-263AB package.
The typical thermal resistance junction-to-case (RθJC) is 2.0 °C/W per diode.
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