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MBRB20100CT-M3/8W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 100V 10A TO263AB. Review the specifications below when checking this part for your BOM.
The MBRB20100CT-M3/8W is a dual common-cathode high-voltage Schottky rectifier manufactured by Vishay General Semiconductor. It utilizes Trench MOS Schottky technology to achieve lower power losses and high efficiency. The device features a maximum repetitive peak reverse voltage of 100 V and a total maximum average forward rectified current of 20 A, distributed as 10 A per diode. It operates within a junction temperature range of -65 °C to +150 °C and is housed in a D2PAK (TO-263AB) surface-mount package.
Verify the specific ordering suffix against official documentation to confirm packaging format and compliance status. Confirm that the component meets the required environmental standards for the intended application. Ensure compatibility with the designated mounting pad layout for proper thermal dissipation and mechanical stability during assembly.
Select this component for applications requiring high-efficiency rectification at 100 V reverse voltage. Consider the thermal resistance characteristics when designing heat sinks for continuous operation. Validate the forward voltage drop specifications against system power loss constraints. Ensure the package type aligns with the automated placement equipment capabilities.
This part belongs to the MBRB20 series of dual common-cathode Schottky rectifiers from Vishay. The series offers various voltage ratings and current configurations optimized for switching applications. The M3 designation indicates halogen-free, RoHS-compliant materials. The /8W suffix specifies tape and reel packaging for automated manufacturing processes.
MBRB2090CT-M3/8W
The maximum repetitive peak reverse voltage is 100 V.
Yes, it meets MSL level 1 per JESD-020 with a LF maximum peak of 245 °C.
The typical thermal resistance from junction to case is 2.0 °C/W.
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