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MBRB20H90CT-E3/81 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 90V 10A TO263AB. Review the specifications below when checking this part for your BOM.
The MBRB20H90CT-E3/81 is a dual common cathode high voltage Schottky rectifier manufactured by Vishay General Semiconductor - Diodes Division. It utilizes High Barrier Technology for improved high-temperature performance and features a D2PAK (TO-263AB) surface-mount package. The device provides a maximum repetitive peak reverse voltage of 100 V and a total maximum average forward rectified current of 20 A, with 10 A per diode. It supports a peak forward surge current of 250 A and operates within a junction temperature range of -65 °C to +175 °C.
Verify the specific ordering suffixes against official documentation to confirm package type and compliance status. Confirm that the E3 suffix indicates RoHS compliance and the M3 suffix indicates halogen-free commercial grade specifications. Ensure the selected variant matches the required thermal resistance and mounting torque limits for the intended application environment.
Select this component based on the requirement for a dual common cathode configuration in surface-mount designs. Consider the thermal characteristics, specifically the typical thermal resistance of 2.0 °C/W per diode for the TO-263AB package, when designing heat dissipation solutions. Validate that the 100 V reverse voltage rating aligns with the circuit's peak working reverse voltage requirements.
This part belongs to the MBR20H100CT series, which includes variants in TO-220AB, ITO-220AB, and D2PAK packages. The series is characterized by silicon Schottky technology designed for high-frequency rectification. The MBRB20H100CT specifically denotes the D2PAK surface-mount version within this family of high barrier Schottky rectifiers.
MBRB20H100CT-M3/I
The maximum operating junction temperature is +175 °C.
Yes, the device incorporates a guardring structure for overvoltage protection.
The typical thermal resistance per diode is 2.0 °C/W.
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