MBRB2535CTL

Diode Arrays Overview

The MBRB2535CTL is a SWITCHMODE Power Rectifier utilizing the Schottky Barrier principle in a large metal-to-silicon power diode. It features epitaxial construction with oxide passivation and metal overlay contact, housed in a D2PAK surface mount package (CASE 418B). The device operates as a dual common-cathode rectifier with a peak repetitive reverse voltage of 35 V and an average rectified forward current of 12.5 A per leg. It supports a non-repetitive peak surge current of 150 A and maintains an operating junction temperature range from -65°C to +125°C.

Diode Arrays Feature Summary

• Employs Schottky Barrier principle for low forward voltage and high efficiency
• Features guardring structure for enhanced stress protection
• Utilizes short heatsink tab manufactured without shearing
• Epoxy molding compound meets UL 94 V-0 flammability rating

Diode Arrays Applications

• Low voltage, high frequency switching power supplies
• Free wheeling diodes
• Polarity protection circuits

Diode Arrays Procurement Notes

Verify component authenticity through authorized onsemi distribution channels. Confirm package variant matches specific ordering suffix requirements, such as 'G' for lead-free composition or 'T4' for tape and reel packaging. Ensure storage conditions adhere to MSL Level 1 specifications. Validate thermal management design against junction-to-case thermal resistance parameters before final integration.

Diode Arrays Selection Notes

Select this component for applications requiring robust surface-mount rectification with low forward voltage drop. The D2PAK package offers thermal performance comparable to industry-standard TO-220 packages while enabling automated assembly. Consider the 12.5 A continuous current rating and 35 V blocking capability when designing power stages. Ensure adequate heatsinking to maintain junction temperatures within the specified operational limits during peak load conditions.

Diode Arrays Part Context

This device belongs to the MBRB2535CTL series of SWITCHMODE Power Rectifiers by onsemi. It is designed for surface-mount applications where space constraints and thermal efficiency are critical. The product line emphasizes state-of-the-art geometry for improved reliability and performance in modern power electronics designs.

Diode Arrays Replacement Considerations

MBRB2535CTLT4G serves as the lead-free equivalent within the same package configuration. Verify pinout compatibility and thermal characteristics when substituting with other dual common-cathode Schottky rectifiers in the D2PAK form factor.

Diode Arrays FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +125°C.

How is the internal configuration structured?

The device features a center-tap configuration with two independent Schottky barrier rectifiers sharing a common cathode.

What is the typical forward voltage at rated current?

The maximum instantaneous forward voltage is 0.55 V at 25 A and 25°C junction temperature.