MBRB30H45CTHE3/81

Diode Arrays Overview

The MBRB30H45CTHE3/81 is a dual common cathode high voltage Schottky rectifier manufactured by Vishay General Semiconductor. It utilizes high barrier technology to deliver low forward voltage drop, low leakage current, and improved high-temperature performance. The device is housed in a D2PAK (TO-263AB) surface-mount package designed for efficient thermal dissipation. Key electrical characteristics include a maximum repetitive peak reverse voltage of 45 V and a total maximum average forward rectified current of 30 A, with 15 A per diode.

Diode Arrays Feature Summary

• High barrier technology ensures enhanced performance at elevated temperatures
• Guardring structure provides protection against overvoltage conditions
• Low forward voltage drop contributes to reduced power loss and higher efficiency
• Low leakage current supports reliable operation in high-frequency applications

Diode Arrays Applications

• High frequency rectification in switching mode power supplies
• Freewheeling diodes in DC/DC converter circuits
• Polarity protection in electronic systems

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance requirements and packaging type. Confirm that the component meets the necessary environmental standards for your application. Ensure compatibility with the intended mounting process and thermal management strategy before finalizing procurement decisions.

Diode Arrays Selection Notes

Select this component when a surface-mount solution is required for high-efficiency power conversion. The D2PAK package offers a balance between current handling capability and board space constraints. Consider the thermal resistance characteristics and derating curves to ensure the junction temperature remains within safe operating limits under expected load conditions.

Diode Arrays Part Context

This part belongs to the MBRB30HxxCT series of dual common cathode Schottky rectifiers from Vishay. The series is characterized by its use of high barrier silicon technology, which distinguishes it from standard Schottky devices by offering superior thermal stability and lower leakage currents at high temperatures.

Diode Arrays Replacement Considerations

MBRB30H100CT-M3/I

Diode Arrays FAQ

What is the maximum operating junction temperature for this device?

The maximum operating junction temperature is 175 °C.

Does the device meet moisture sensitivity level requirements?

Yes, the device meets MSL level 1 per J-STDA-020.

What is the configuration of the internal diodes?

The device features a dual common cathode circuit configuration.