ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
MBRD660CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE ARRAY SCHOTTKY 60V 3A DPAK. Review the specifications below when checking this part for your BOM.
Diode Arrays specifications for MBRD660CT
- Description：DIODE ARRAY SCHOTTKY 60V 3A DPAK
- Series：SWITCHMODE™
- Mfr：onsemi
- Package：Tube
- Diode Configuration：1 Pair Common Cathode
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：60 V
- Current - Average Rectified (Io) (per Diode)：3A
- Voltage - Forward (Vf) (Max) @ If：700 mV @ 3 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：100 µA @ 60 V
- Operating Temperature - Junction：-65°C ~ 175°C
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：DPAK
- Grade：-
- Qualification：-
Diode Arrays datasheet and documents for MBRD660CT
Diode Arrays Overview
The MBRD660CT is a dual Schottky barrier rectifier in a DPAK-3 surface mount package. It features a common cathode configuration with two silicon diode elements. The device supports a peak repetitive reverse voltage of 60 V and an average rectified forward current of 3 A per diode at a case temperature of 130°C. Maximum instantaneous forward voltage reaches 0.9 V at 6 A and 25°C, while maximum reverse current is 15 mA at 125°C. Thermal resistance from junction to case is 6°C/W.
Diode Arrays Feature Summary
- Extremely fast switching capability for high-frequency applications
- Extremely low forward voltage drop to minimize power loss
- Platinum barrier construction with avalanche guardrings for stress protection
Diode Arrays Applications
- Switching power supplies
- Inverters
- Free wheeling diodes
Diode Arrays Procurement Notes
Verify the specific ordering suffix against the manufacturer's documentation to confirm packaging format and compliance status. Suffixes such as 'T4' indicate tape and reel quantities, while 'G' denotes lead-free packages. Confirm that the selected variant matches the required shipping quantity and environmental specifications before finalizing procurement.
Diode Arrays Selection Notes
Select this component when a compact surface-mount solution is required for low-voltage, high-efficiency rectification. Ensure the thermal design accommodates the 6°C/W junction-to-case resistance. Verify that the operating ambient or case temperatures remain within the specified derating curves to maintain the rated 3 A current capacity per leg.
Diode Arrays Part Context
This device belongs to the MBRD6x0CT series of SwitchMODE Power Rectifiers manufactured by onsemi. The series includes variants with reverse voltages ranging from 20 V to 60 V. All devices share the same DPAK-3 mechanical footprint and electrical characteristics except for the maximum reverse voltage rating.
Diode Arrays Replacement Considerations
MBRD650CT
Diode Arrays FAQ
What is the maximum non-repetitive peak surge current?
The MBRD660CT supports a non-repetitive peak surge current of 75 A under half-wave, single-phase, 60 Hz conditions.
Is the MBRD660CT available in a lead-free package?
Yes, lead-free packages are available, typically identified by the 'G' suffix in the ordering information.
What is the maximum operating junction temperature?
The maximum operating junction temperature range is -65°C to +175°C.
Explore related parts through Rectifiers, Diodes, Discrete Semiconductor Products, all product categories.
